应用于DRAM的BST薄膜制备与性能研究  

The Fabrication and Properties of BST Thin Films for DRAM Application

作　　者：王小宁[1] 刘建设[1] 任天令[1] 赵宏锦[1] 邵天奇[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《压电与声光》2002年第6期459-462,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(69806007);"九七三"基金资助项目(G1999033105)

摘　　要：BaxSr1-xTiO3(BST)是动态随机存取存储器(DRAM)中常规电容介质SiO2的替代材料。用溶胶-凝胶(Sol-Gel)法在Si及Pt/Ti/SiO2/Si基片上制备出了较高品质的BST薄膜。系统地研究了在不同退火条件下薄膜的结晶情况、微结构和电学性能。在室温100kHz下,薄膜的介电常数为230。在3V的偏压下,薄膜的漏电流密度为1.6×10-7A/cm2。利用HCl/HF刻蚀溶液成功获得了分辨率达到微米量级的BST薄膜微图形。BaxSr1-xTiO3(BST) is alternative dielectric for high density DRAM.High quality BST thin films on Si and Pt/Ti/SiO2/Si substrates have been prepared by a SolGel method.Barium acetate,strontium acetate and tianium isopropoxide are used as raw materials.Acetic acid and ethylene glycol are used as solvents.The effect of annealing condition on crystalline structure,microstructure and electrical properties has been discussed.The εr is 230 at room temperature and 100 kHz.The leakage current density is 1.6×10-7 A/cm2 at 3 V.The BST thin films are well etched using HCl/HF solution after typical semiconductor lithographic process.

关 键 词：DRAM BST薄膜 制备 溶胶-凝胶法 刻蚀 动态随机存取存储器 复合钙钛矿 钛酸锶钡 

分 类 号：TP333.8[自动化与计算机技术—计算机系统结构]