4H-SiC离子注入层的欧姆接触的制备(英文)  

Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation

作　　者：王守国[1,2] 张义门[1] 张玉明[1] 

机构地区：[1]西安电子科技大学微电子所 [2]西北大学电子系 西安 710069

出　　处：《电子科技大学学报》2003年第2期203-206,共4页Journal of University of Electronic Science and Technology of China

基　　金：国防预研基金资助项目;编号:8.1.7.3 ~~

摘　　要：用氮离子注入的方法制备了4H-SiC欧姆接触层。注入层的离子浓度分布由蒙特卡罗分析软件 TRIM模拟提取,Si面4H-SiC-Ni/Cr合金欧姆接触的特性由传输线方法结构进行了测量,得到氮离子注入层的方块电阻Rsh为30 kW/square, Ni/Cr合金与离子注入层的欧姆接触电阻rc为7.1×10-4 Wcm2。Doping by nitrogen ion-implantation is used to fabricate the Ohmic contacts of 4H-SiC. The implantation depth profile is simulated with the Monte Carlo simulator TRIM. Ni/Cr/Si-face 4H-SiC Ohmic contacts are measured by Transfer Length Method structures. The result for sheet resistance Rsh of the implanted layers is 30 kW/square. The specific contact resistances rc of Ohmic contacts is 7.1×10-4 Wcm2.

关 键 词：SIC 碳化硅 离子注入 欧姆接触 方块电阻 

分 类 号：TN304.24[电子电信—物理电子学]