A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs ch...
The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using...