界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响  

Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET

作　　者：汤晓燕[1] 张义门[1] 张玉明[1] 郜锦侠[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2003年第4期830-833,共4页Acta Physica Sinica

摘　　要：针对界面态密度在禁带中的不均匀分布 ,分析了界面态电荷对n沟 6H碳化硅MOSFET场效应迁移率的影响 .分析结果显示 ,界面态电荷使n沟碳化硅器件的场效应迁移率明显降低 .The effect of interface state charges on the field-effect mobility of n-channel 6H-SiC MOSFET is analyzed based on the non-uniform distribution of interface state density in the energy gap. The results of the analysis show that interface state charges have the influence of lowering the field-effect mobility in n-channel SiC MOSFET. A relationship has been established between the ratio of the experimentally determined field-effect mobility to the inversion-layer carrier mobility and interface states.

关 键 词：界面态电荷 碳化硅 反型层迁移率 场效应迁移率 界面态密度 载流子 n沟碳化硅器件 MOSFET 

分 类 号：O472[理学—半导体物理]