三端自由高压LDMOS器件设计  

Design of a High Voltage LDMOS Device with 3 Electrodes Free

作　　者：肖文锐[1] 王纪民[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2004年第2期189-191,共3页Microelectronics

摘　　要：　应用RESURF原理,设计了三端自由的高压LDMOS器件。采用虚拟制造技术,分析比较了多种结构,对器件结构进行了优化。设计了与常规CMOS兼容的高压器件结构的制造方法和工艺。采用虚拟制造,得到NMOS和PMOS虚拟器件,击穿电压分别为350V和320V。Based on the RESURF theory, a high voltage LDMOS device with 3 electrodes free is designed. Using virtual wafer fabrication technique, different structures of high voltage LDMOS's are analyzed and compared, and optimized structures are obtained. Process technology for this high voltage device structure, which is compatible with the conventional CMOS process, is designed. Virtual NMOST and PMOST devices with breakdown voltages of 350 V and 320 V are fabricated.

关 键 词：LDMOS RESURF 三端自由 虚拟制造 高压器件 击穿电压 

分 类 号：TN386[电子电信—物理电子学]