等离子MOCVD系统生长ZnO薄膜掺N_2和掺NH_3特性比较  

Comparing with the Characteristics of N_2 and NH_3 Doped ZnO Thin Films Grown by Plasma MOCVD System

作　　者：常玉春[1] 杨晓天[2] 王金忠[2] 王新强[2] 刘博阳[2] 刘大力[2] 胡礼忠[1] 杜国同[2] 

机构地区：[1]大连理工大学物理系,辽宁大连116023 [2]吉林大学电子科学与工程学院集成光电子学国家重点实验室,吉林长春130023

出　　处：《发光学报》2004年第2期143-146,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60176026;6017707);国家"863"计划(2001AA311130);吉林大学青年教师基金

摘　　要：利用MOCVD方法生长了高质量的ZnO薄膜材料,分别通过N_2和NH_3对c面和R面蓝宝石衬底上生长的ZnO薄膜材料进行了掺杂行为研究。掺N_2时,X射线衍射半峰全宽仅为0.148°,室温光荧光发光峰位于3.29 eV,半峰全宽～100 meV,电阻率由0.65Ω·cm增大到5×10~4Ω·cm。掺NH_3时,X射线衍射峰半峰全宽0.50°,样品为弱p型,电阻率为102 Ω·cm,载流于浓度为1.69×10^(16)cm^(-3)。同时我们还观察到弱p型材料很容易退化成n型高阻材料。ZnO is a multi-function direct wide-band semiconductor material with wurtzite structure. It has potential applications in varistors, phosphors, transparent electrode, optoelectronic devices, blue-purple light devices. n- type low resistivity ZnO is easy to obtain. However, the difficulty of high resistivity ZnO and p type ZnO must be resolved for the purpose of fabricating practical ZnO devices. Although many research groups are working on it, p- type ZnO problem has never been figured out. N is an effective p-type dopant for Ⅱ-Ⅵ group compounds. There are two effects when N is doped in ZnO thin films: providing a shadow acceptor energy level and decreasing concen- tration of Zn_i atoms by combining with ZnO. Thus, it is possible to obtain high resistivity and p-type ZnO by doping N atoms in ZnO. There has two kinds of N source, N_2 and NH_3. In this paper, the behaviors of N_2 and NH_3 doped in ZnO thin films are investigated. Firstly, N_2 was doped in ZnO thin films grown on c-plane sapphire substrate using plasma assisted MOCVD system. Plasma generator of plasma assisted MOCVD system is very efficient to dope N atoms into ZnO films and to obtain high resistivity ZnO thin films. The N_2 doped ZnO films have all of properties of ZnO and show high crystal quality, especially in optical properties, which show light-yellow body color. XRD measurement shows a high inten- sity peak at 2θ=34.6°with a FWHM of 0.148°, which is (002) peak of ZnO. The corresponding value of double- crystal XRD rocking-curve is 0.34°. The emitting peak locates at 3.29 eV in PL spectrum with a FWHM of 100 meV. Compared with 0.65Ω·cm of undoped sample, the resistivity increases to 5×10~4Ω·cm with N_2 doping. Secondly, the behavior of NH_3 doped ZnO grown on R-plane sapphire has been investigated. After optimized growth conditions, the XED result shows a high intensity peak at

关 键 词：金属有机化学气相沉积 氧化锌薄膜 半导体材料 氮气掺杂 氨气掺杂 载流子浓度 

分 类 号：O472.3[理学—半导体物理]