国家自然科学基金(s60936005)

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A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO_2 /Si stacked MOSFETs
《Chinese Physics B》2012年第10期439-445,共7页马飞 刘红侠 樊继斌 王树龙 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083);the Fundamental Research Funds for the Central Universities (Grant No. 20110203110012)
In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering...
关键词：metal-gate HIGH-K work function flat-band voltage threshold voltage metal-oxide-semiconductor field-effect transistor 
A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures
《Chinese Physics B》2012年第5期596-601,共6页马飞 刘红侠 匡潜玮 樊继斌 
Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(Grant No.708083);the Fundamental Research Funds for the Central Universities of China(Grant No.20110203110012)
We investigate the influence of voltage drop across the lightly doped drain（LDD） region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overl...
关键词：threshold voltage high-k gate dielectric fringing-induced barrier lowering short channeleffect 
The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics
《Chinese Physics B》2012年第5期602-606,共5页马飞 刘红侠 匡潜玮 樊继斌 
Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097);the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China(Grant No.708083);the Fundamental Research Funds for the Central Universities,China(Grant No.20110203110012)
The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain ...
关键词：high-k gate dielectric fringing-induced barrier lowering stack gate dielectric MOSFET 
Diode parameter extraction by a linear cofactor difference operation method
《Journal of Semiconductors》2010年第11期43-46,共4页马晨月 张辰飞 王昊 何进 林信南 Mansun Chan 
Project supported by the State Key Development Program for Basic Research of China and the National Natural Science Foundation of China(Nos.60936005,60976066)
The linear cofactor difference operator（LCDO） method,a direct parameter extraction method for general diodes,is presented.With the developed LCDO method,the extreme spectral characteristic of the diode voltage-curre...
关键词：LCDO DIODE parameter extraction ideality factor series resistance 
Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures
《Chinese Physics B》2010年第5期530-535,共6页刘红侠 吴笑峰 胡仕刚 石立春 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 60976068);the New Century Excellent Talents of Ministry of Education of China (Grant No. NCET-05-0851);the Cultivation Fund of Key Scientific and Technical Innovation Project,Ministry of Education of China (Grant No. 708083);the Applied Materials Innovation Fund(Grant No. XA-AM-200701)
Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current-voltage characterisation technique with annealing temperatures from 300 ℃ to 500℃. Based on the current transport m...
关键词：NiGe Schottky diode barrier height parameter extraction 
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