supported by the National Natural Science Foundation (Nos. 60990311 and 60676004);the Key Basic Research Project of Shanghai Science and Technology (No. 10JC1415700)
A-plane GaN films are deposited on (302) γ-LiAlO2 substrates by metalorganic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) results indicate that the in-plane orientation relationship between Ga...
supported by the Project of High Technology Research and Development of China(2006AA03A101 and 2006AA03A103);the National Natural Science Foundation of China(60676004);the Science Research Program of Shanghai(05PJ14100 and 06dz11402).
γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by high...