supported by the National Natural Science Foundation of China(No.61274072);the National High Technology Research and Development Program of China(No.2013AA014201)
We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi- mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode...
Project supported by the National Natural Science Foundation of China(Grant No.61274072);the National High Technology Research and Development Program of China(Grant No.2013AA014201)
A wide wavelength tuning range swept external-cavity laser using an In As/Ga As quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Li...
Project supported by the National Natural Science Foundation of China(Grant No.61274072);the National High Technology Research and Development Program of China(Grant No.2013AA014201)
A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss an...
supported by the National Natural Science Foundation of China (Grant Nos. 61274072, 60976057, 61176047, and 60876086)
The optical performance of a grating-coupled external Continuous tuning from 1391 nm to 1468 nm is realized at cavity laser based on InAs/InP quantum dots is investigated. an injection current of 1900 mA. With the inj...
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057, 61274072, and 60876086)
With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer co...
Project supported by the National Basic Research Program of China (Grant No. 2006CB604904);the National Natural Science Foundation of China (Grant Nos. 60976057,61274072,and 60776037)
We report the effect of the GaAs spacer layer thickness on the photoluminescence (PL) spectral bandwidth of InAs/GaAs self-assembled quantum dots (QDs). A PL spectral bandwidth of 158 nm is achieved with a five-la...