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国家自然科学基金(11005134): 作品数：13被引量：16H指数：3; 导出分析报告; 相关期刊：《Journal of Wuhan University of Technology(Materials Science)》《Chinese Physics C》《Journal of Semiconductors》《Science China(Physics,Mechanics & Astronomy)》更多>>; 相关主题：GEANT4MONTE_CARLOLETHEAVY_IONPROTON更多>>; 相关领域：理学自动化与计算机技术一般工业技术更多>>

Prediction of proton-induced SEE error rates for the VATA160 ASIC被引量：1: 《Nuclear Science and Techniques》2017年第1期88-93,共6页Kai Xi Di Jiang Shan-Shan Gao Jie Kong Hong-Yun Zhao Hai-Bo Yang Tian-Qi Liu Bin Wang Bing Ye Jie Liu; supported by the National Natural Science Foundation of China(Nos.11179003,10975164,10805062,and 11005134); We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo sim...; 关键词：PROTON ASIC SINGLE EVENT effects ERROR rates

Monte Carlo predictions of proton SEE cross-sections from heavy ion test data: 《Chinese Physics C》2016年第6期43-48,共6页习凯耿超张战刚侯明东孙友梅罗捷刘天奇王斌叶兵殷亚楠刘杰; Supported by National Natural Science Foundation of China(11179003,10975164,10805062,11005134); The limits of previous methods prompt us to design a new approach （named PRESTACE） to predict proton single event effect （SEE） cross-sections using heavy-ion test data. To more realistically simulate the SEE mecha...; 关键词：single event effects GEANT4 PROTONS heavy ions

Irradiation effects of graphene and thin layer graphite induced by swift heavy ions: 《Chinese Physics B》2015年第8期450-456,共7页曾健刘杰张胜霞翟鹏飞姚会军段敬来郭航侯明东孙友梅; supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,11005134,and 11275237); Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated ...; 关键词：GRAPHENE thin graphite films swift heavy ions irradiation effect

Preparation and Magnetic Properties of Cu-Ni Core-shell Nanowires in Ion-track Templates: 《Journal of Wuhan University of Technology(Materials Science)》2015年第4期665-669,共5页陈永辉 DUAN Jinglai YAO Huijun MO Dan WANG Tieshan SUN Youmei 刘杰; Funded by the National Natural Science Foundation of China(Nos.11175221,11179003,11005134,11375241,and 11275237);the West Light Foundation of Chinese Academy of Sciences(CAS); Cu-Ni core-shell nanowires, with an inner Cu core diameter of about 60 nm and varying Ni shell thicknesses （10, 30, 50, 60, and 80 nm）, were successfully fabricated in porous polycarbonate （PC） ion- track template...; 关键词：core-shell nanowires ion track template ETCHING ELECTRODEPOSITION magnetic property

Raman spectrum study of graphite irradiated by swift heavy ions: 《Chinese Physics B》2014年第12期361-366,共6页翟鹏飞刘杰曾健姚会军段敬来侯明东孙友梅 Ewing Rodney Charles; Project supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134); Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500c...; 关键词：Raman spectroscopy swift heavy ions highly oriented pyrolytic graphite STRAIN ion velocity effect

Simulation of the characteristics of low-energy proton induced single event upset被引量：3: 《Science China(Physics,Mechanics & Astronomy)》2014年第10期1902-1906,共5页GENG Chao XI Kai LIU TianQi LIU Jie; supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062 and 11005134); Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were com...; 关键词：single event upset PROTON direct ionization Monte Carlo

Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect: 《Chinese Physics B》2014年第8期415-419,共5页耿超习凯刘天奇古松刘杰; Project supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134); Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis （MUFPSA）, we study the temporal characteristics of ion-velocity susceptibility to the single event upset （SEU） effect, includin...; 关键词：ion-velocity single event upset deposited energy traversed time

Impact of temperature on single event upset measurement by heavy ions in SRAM devices: 《Journal of Semiconductors》2014年第8期98-103,共6页刘天奇耿超张战刚赵发展古松童腾习凯刘刚韩郑生侯明东刘杰; Project supported by the National Natural Science Foundation of China(Nos.11179003,10975164,10805062,11005134); The temperature dependence of single event upset （SEU） measurement both in commercial bulk and silicon on insulator （SOI） static random access memories （SRAMs） has been investigated by experiment in the Heavy Io...; 关键词：single event upset temperature dependence static random access memory Monte Carlo simulation

Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility被引量：1: 《Chinese Physics B》2013年第10期661-666,共6页耿超刘杰习凯张战刚古松刘天奇; Project supported by the National Natural Science Foundation of China (Grant Nos.11179003,10975164,10805062,and 11005134); The influence of the metric of linear energy transfer （LET） on single event upset （SEU）, particularly multiple bit upset （MBU） in a hypothetical 90-nm static random access memory （SRAM） is explored. To explain...; 关键词：MUFPSA LET MBU ion track structure

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation被引量：5: 《Chinese Physics B》2013年第8期529-533,共5页张战刚刘杰侯明东孙友梅苏弘段敬来莫丹姚会军罗捷古松耿超习凯; supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,and 11005134); Experimental evidence is presented relevant to the angular dependences of multiple-bit upset （MBU） rates and patterns in static random access memories （SRAMs） under heavy ion irradiation. The single event upset （...; 关键词：single event effects effective LET method multiple-bit upset upset cross section

国家自然科学基金(11005134)