supported by the Ministry of Science and Technology of China(2011CB933001and2011CB933002);the National Natural Science Foundation of China(61071013)
Graphene is considered as a promising material to construct field-effect transistors (FETs) for high frequency electronic applications due to its unique structure and properties,mainly including extremely high carrier...
supported by the Ministry of Science and Technology of China (2011CB933001,2011CB933002);the Fundamental Research Funds for Central Universities;the National Natural Science Foundation of China (61071013,61001016)
Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or Y.The n-type CNT FETs were pushed to their performanc...
supported by the National Basic Research Program of China (2011CB933002,2011CB933001);the Fundamental Research Funds for the Central Universities;the National Natural Science Foundation of China (61071013,61001016,51072006,60971003)
Semiconducting carbon nanotubes(CNTs) possess outstanding electrical and optical properties because of their special one-dimen-sional(1D) structure.CNTs are direct bandgap materials,which makes them ideal for use in o...