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国家自然科学基金(61204092): 作品数：13被引量：11H指数：2; 导出分析报告; 相关作者：庄奕琪汤华莲张丽赵启凤胡为更多>>; 相关机构：西安电子科技大学巴黎第十一大学更多>>; 相关期刊：《光子学报》《High Technology Letters》《西安电子科技大学学报》《Chinese Physics B》更多>>; 相关主题：TRANSISTORSFIELD-EFFECTFTUNNELTRANSISTOR更多>>; 相关领域：电子电信化学工程理学电气工程更多>>

Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric: 《Chinese Physics B》2018年第7期572-579,共8页CongLi Zhi-Rui Yan Yi-Qi Zhuang Xiao-Long Zhao Jia-Min Guo; Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092); A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric （GHL-TFET） is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, ...; 关键词：tunnel field-effect transistors Ge/Si heterojunction hetero-gate-dielectric ambipolar effect

Impact of low/high-κ spacer-source overlap on characteristics of tunnel dielectric based tunnel field-effect transistor: 《Journal of Central South University》2017年第11期2572-2581,共10页JIANG Zhi ZHUANG Yi-qi LI Cong WANG Ping LIU Yu-qi; Projects(61574109,61204092)supported by the National Natural Science Foundation of China; The effects of low-κ and high-κ spacer were investigated on the novel tunnel dielectric based tunnel field-effect transistor(TD-FET) mainly based upon ultra-thin dielectric direct tunneling mechanism. Drive currents...; 关键词：tunnel dielectric based tunnel field-effect transistor tunnel field-effect transistor band-to-band tunneling tunneling dielectric layer subthreshold slope off-current on-current

锰钴镍型红外探测器空间环境效应与1/f噪声甄别方法（英文）: 《光子学报》2016年第7期107-112,共6页胡为庄奕琪包军林赵启凤; The National Natural Science Foundation of China(Nos.61076101,61204092);the Fundamental Research Funds for the Central Universities(No.JB150412); 在模拟的空间环境试验中测试了锰钴镍型红外探测器的电阻值和低频噪声参量.采用钴-60源分别在10rad(si)/s和0.1rad(si)/s的剂量率下对两组样品累积辐照到总剂量150krad(si),结果表明:在0.1rad(si)/s剂量率下探测器低频噪声退化量远大于1...; 关键词：1/f噪声可靠性伽马辐照热应力红外探测器

Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates被引量：1: 《Chinese Physics B》2016年第4期261-267,共7页赵启凤庄奕琪包军林胡为; supported by the National Natural Science Foundation of China(Grant Nos.61076101 and 61204092); It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the em...; 关键词：radiation 1/f noise bipolar junction transistors

Radiation-induced 1/f noise degradation of bipolar linear voltage regulator: 《Journal of Semiconductors》2016年第3期53-57,共5页赵启凤庄奕琪包军林胡为; Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092); Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference...; 关键词：radiation bipolar linear voltage regulator 1/f noise degradation

Total dose effects on the g–r noise of JFET transistors: 《Journal of Semiconductors》2016年第3期58-60,共3页胡为庄奕琪包军林赵启凤; Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092);the Fundamental Research Funds for the Central Universities(No.JB150412); Silicon junction field effect transistors（JFETs） have been exposed to Co-（60）-rays to study radiationinduced effects on their dc characteristics and noise. The devices have been irradiated and measured at room tem...; 关键词：radiation junction field-effect transistors generation–recombination noise

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor被引量：1: 《Chinese Physics B》2016年第2期463-467,共5页蒋智庄奕琪李聪王萍刘予琪; Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092); Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold perf...; 关键词：trap-assisted tunneling （TAT） tunnel field-effect transistors （TFETs） optical phonon scattering （OP） acoustic phonon scattering （AP）

Design and analysis on four stage SiGe HBT low noise amplifier被引量：2: 《High Technology Letters》2015年第3期358-363,共6页井凯 Zhuang Yiqi Li Zhenrong Lin Zhiyu; Supported by the National Natural Science Foundation of China(No.61076101,61204092,61306033); Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitati...; 关键词：low noise amplifier （LNA） pole-zero cancellation noise figure （NF） SiGe HBT BJT LINEARITY

Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates: 《Journal of Semiconductors》2015年第6期68-71,共4页赵启凤庄奕琪包军林胡为; Project supported by the National Natural Science Foundation of China(Nos.61076101,61204092); Ionizing-radiation-induced current gain degradation in NPN bipolar junction transistors is due to an increase in base current as a result of recombination at the surface of the device. A model is presented which ident...; 关键词：RADIATION bipolar junction transistors current gain degradation model

Quantum percolation tunneling current 1/f^γ noise model for high-κ gate stacks Bi-layer breakdown: 《Science China(Physics,Mechanics & Astronomy)》2014年第9期1637-1643,共7页LIU YuAn ZHANG YiQi LI Cong; supported by the National Natural Science Foundation of China(Grant Nos.61076101 and 61204092); Based on the elastic trap-assisted tunneling mechanism in high-κgate stacks,a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation...; 关键词：1/f^γ noise quantum percolation tunneling MOSFETs high-κ gate stacks Bi-layer breakdown

国家自然科学基金(61204092)