高等学校学科创新引智计划(B07005)

作品数：108被引量：191H指数：6
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相关作者：黄永清任晓敏黄辉陈雪王琦更多>>
相关机构：北京邮电大学教育部北方工业大学山西大学更多>>
相关期刊：《半导体技术》《Chinese Physics B》《中国新通信》《Chinese Optics Letters》更多>>
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Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots
《Chinese Physics B》2021年第11期146-150,共5页Guo-Feng Wu Jun Wang Wei-Rong Chen Li-Na Zhu Yuan-Qing Yang Jia-Chen Li Chun-Yang Xiao Yong-Qing Huang Xiao-Min Ren Hai-Ming Ji Shuai Luo 
Project supported by the National Natural Science Foundation of China(Grant Nos.61874148,61974141,and 61674020);the Beijing Natural Science Foundation,China(Grant No.4192043);the National Key Research and Development Program of China(Grant No.2018YFB2200104);the Fund from the Beijing Municipal Science&Technology Commission,China(Grant No.Z191100004819012);the Project of the State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,China(Grant No.IPOC2018ZT01);the 111 Project of China(Grant No.B07005).
The threading dislocations(TDs)in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon.The insertion of InAs quantum dots(QDs)acting as dislocation filt...
关键词：InAs/GaAs quantum dots threading dislocation finite element method bending area 
Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates
《Chinese Physics B》2021年第1期359-364,共6页Ze-Yuan Yang Jun Wang Guo-Feng Wu Yong-Qing Huang Xiao-Min Ren Hai-Ming Ji Shuai Luo 
Project supported by the National Natural Science Foundation of China(Grant Nos.61874148,61974141,and 61674020);the Beijing Natural Science Foundation,China(Grant No.4192043);the State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China(Grant No.IPOC2018ZT01);the 111 Project of China(Grant No.B07005)。
We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned subst...
关键词：GaAs on Si thermal stress V-groove finite-element method 
Integrated optoelectronic chip pair for transmitting and receiving optical signals simultaneously被引量：2
《Chinese Optics Letters》2019年第4期52-56,共5页Kai Liu Qi Wei Yongqing Huang Xiaofeng Duan Qi Wang Xiaomin Ren Shiwei Cai 
supported by the National Natural Science Foundation of China(Nos.61874147,61574019,61674020,and 61674018);the Fund of State Key Laboratory of Information Photonics and Optical Communications(No.IPOC2016ZT10);the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001);the 111 Project(No.B07005)
An integrated optoelectronic chip pair, which can transmit and receive optical signals simultaneously, is proposed in this Letter. The design and optimization of its key structure, the vertical cavity surface emitting...
关键词：INTEGRATED OPTOELECTRONIC proposed in this LETTER APPLICATIONS 
A pair of integrated optoelectronic transceiving chips for optical interconnects被引量：1
《Chinese Optics Letters》2018年第9期46-50,共5页Kai Liu Huize Fan Yongqing Huang Xiaofeng Duan Qi Wang Xiaomin Ren Qi Wei and Shiwei Cai 
supported by the Fund of State Key Laboratory of Information Photonics and Optical Communications(No.IPOC2016ZT10);the National Natural Science Foundation of China(Nos.61574019,61674020,and 61674018);the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001);the 111 Project(No.B07005)
In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector u...
关键词：LENGTH PIN PD AC VCSEL A pair of integrated optoelectronic transceiving chips for optical interconnects 
Research on photodiode integrated with wide spectrum focusing reflector using nonperiodic subwavelength gratings被引量：2
《Chinese Optics Letters》2018年第5期52-55,共4页Tao Liu Yongqing Huang Jiarui Fei Gang Wu Xiaokai Ma Xiaofeng Duan Kai Liu Xiaomin Ren 
funded by the National Natural Science Foundation of China(NSFC)(Nos.61574019,61674020,and 61274044);the 111 Project(No.B07005);the Beijing Municipality Natural Science Foundation(No.4132069);the Program for Changjiang Scholars;Innovative Research Team in University through the Ministry of Education of China(No.IRT0609)
The fabrication and characterization of p-i-n photodiodes integrated with wide spectrum focusing reflectors using nonperiodic strip and concentric-circular subwavelength gratings are presented. The experimental result...
关键词：length Research on photodiode integrated with wide spectrum focusing reflector using nonperiodic subwavelength gratings 
1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers被引量：3
《Photonics Research》2018年第4期321-325,共5页JUN WANG HAIYANG HU HAWING YIN YIMING BAI JIAN LI XIN WEI YUANYUAN LIU YONGQING HUANG XIAOMIN REN HUIYUN LIU 
Beijing University of Posts and Telecommunications(BUPT)(IPOC2016ZT01);National Natural Science Foundation of China(NSFC)(61474008,61574019,61674020);International Science&Technology Cooperation Program of China(2011DFR11010);111 Project of China(B07005)
We report on the first electrically pumped continuous-wave(CW) In As/Ga As quantum dot(QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga_(0.51)In_(0.49)P upper cladding layer and ...
关键词：量子点 激光 通讯技术 发展现状 
基于二维亚波长光栅的偏振不敏感宽光谱高反镜的设计被引量：3
《激光与光电子学进展》2017年第3期259-265,共7页周顾人 段晓峰 黄永清 刘凯 任晓敏 
国家自然科学基金(61274044;61574019;61020106007);北京市自然科学基金(41274044);高等学校学科创新引智计划(B07005)
提出了一种基于块状亚波长光栅的偏振不敏感宽光谱高反镜的设计方法。亚波长光栅的反射性能由光栅的结构参数即周期和占空比决定,优化周期和占空比值将使亚波长光栅在更宽的光谱范围内具有更高的反射率。采用严格耦合波分析法计算不同...
关键词：光学器件 亚波长光栅 迭代优化算法 反射镜 
High-reflectivity high-contrast grating focusing reflector on silicon-on-insulator wafer
《Chinese Physics B》2016年第11期306-310,共5页房文敬 黄永清 段晓峰 刘凯 费嘉瑞 任晓敏 
Project supported by the National Natural Science Foundation of China(Grant Nos.61274044,61574019 and 61020106007);the National Basic Research Program of China(Grant No.2010CB327600);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20130005130001);the Natural Science Foundation of Beijing,China(Grant No.4132069);the Key International Science and Technology Cooperation Project of China(Grant No.2011RR000100);the 111 Project of China(Grant No.B07005);the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT0609)
A high-contrast grating（HCG） focusing reflector providing phase front control of reflected light and high reflectivity is proposed and fabricated.Basic design rules to engineer this category of structures are given ...
关键词：reflector grating reflectivity wafer insulator focusing incident polarized length bandwidth 
Fabrication and characterization of novel high-speed In GaAs/InP uni-traveling-carrier photodetector for high responsivity
《Chinese Physics B》2015年第10期612-616,共5页陈庆涛 黄永清 费嘉瑞 段晓峰 刘凯 刘锋 康超 汪君楚 房文敬 任晓敏 
Project supported partially by the National Natural Science Foundation of China(Grant Nos.61274044 and 61077049);the National Basic Research Program of China(Grant No.2010CB327600);the Program of Key International Science and Technology Cooperation Projects,China(Grant No.2011RR000100);the 111 Project of China(Grant No.B07005);the Specialized Research Fund for the Doctoral Program of China(Grant No.20130005130001);the Natural Science Foundation of Beijing,China(Grant No.4132069)
A top-illuminated circular mesa uni-traveling-carrier photodetector（UTC-PD） is proposed in this paper. By employing Gaussian graded doping in In Ga As absorption layer and In P depleted layer, the responsivity and h...
关键词：uni-traveling-carrier photodetector device growth and fabrication RESPONSIVITY 3-dB bandwidth 
Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates
《Chinese Optics Letters》2015年第3期32-36,共5页李小波 黄永清 王俊 段晓峰 张瑞康 李业弘 刘正 王琦 张霞 任晓敏 
supported by the National Natural Science Foundation of China(Nos.61274044 and61020106007);the National Basic Research Program of China(No.2010CB327600);the Natural Science Foundational Science and Technology Cooperation Projects(No.2011RR000100);the 111 Project of China(No.B07005);the Fundamental Research Funds for the Central University(No.2013RC1205);the Specialized Research Fund for the Doctoral Program of Higher Education(No.20130005130001)
We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells （MQWs） laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are g...
关键词：AS In GA m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates Metamorphic growth of 1.55 
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