国家自然科学基金(s60890192)

作品数：7被引量：1H指数：1
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相关期刊：《Science China(Physics,Mechanics & Astronomy)》《Chinese Physics B》《Journal of Semiconductors》更多>>
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
《Chinese Physics B》2014年第2期421-425,共5页吕元杰 冯志红 林兆军 顾国栋 敦少博 尹甲运 韩婷婷 蔡树军 
Project supported by the National Natural Science Foundation of China (Grant Nos.60890192,60876009,and 11174182)
Ni/Au Schottky contacts on A1N/GaN and A1GaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as...
关键词：Al（Ga）N/GaN Schottky barrier height current-transport mechanism leakage current 
Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode
《Chinese Physics B》2013年第7期426-429,共4页吕元杰 冯志红 顾国栋 敦少博 尹甲运 韩婷婷 盛百城 蔡树军 刘波 林兆军 
the National Natural Science Foundation of China(Grant Nos.60890192,60876009,and 11174182);the Foundation of Key Laboratory,China
An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted fro...
关键词：AlGaN/GaN heterostructure Schottky diode threshold voltage series resistance 
An extrinsic f_(max)＞100 GHz InAlN/GaN HEMT with AlGaN back barrier
《Journal of Semiconductors》2013年第4期46-49,共4页刘波 冯志红 敦少博 张雄文 顾国栋 王元刚 徐鹏 何泽召 蔡树军 
Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009)
We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-base...
关键词：AlGaN back barrier InA1N high-electron-mobility transistors power gain cutoff frequency 
Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors
《Journal of Semiconductors》2012年第5期53-56,共4页房玉龙 敦少博 刘波 尹甲运 蔡树军 冯志红 
Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009)
Electrical stress experiments under different bias configurations for AlGaN/GaN high electron mobility transistors were performed and analyzed.The electric field applied was found to be the extrinsic cause for the dev...
关键词：AlGaN/GaN HEMTs electrical degradation traps inverse piezoelectric effect 
A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
《Journal of Semiconductors》2011年第12期68-71,共4页刘波 冯志红 张森 敦少博 尹甲运 李佳 王晶晶 张效帏 房玉龙 蔡树军 
Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009).
We report high performance InA1N/GaN HEMTs grown on sapphire substrates. The lattice-matched InA1N/GaN HEMT sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large sig...
关键词：InA1N/GaN HEMT output power density metal-organic chemical vapor deposition 
The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD
《Science China(Physics,Mechanics & Astronomy)》2011年第3期446-449,共4页HE Tao LI Hui DAI LongGui WANG XiaoLi CHEN Yao MA ZiGuang XU PeiQiang JIANG Yang WANG Lu JIA HaiQiang WANG WenXin CHEN Hong 
supported by the National Natural Science Foundation of China (Grant Nos. 60890192 and 50872146)
Nonpolar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire by metal-organic chemical vapor deposition （MOCVD） under different growth pressures. The as-grown films are investigated by optical mi...
关键词：GaN anisotropy XRD growth pressure MOCVD 
A high-performance enhancement-mode AIGaN/GaN HEMT被引量：1
《Journal of Semiconductors》2010年第8期45-47,共3页冯志红 谢圣银 周瑞 尹甲运 周伟 蔡树军 
Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009).
An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current ...
关键词：ENHANCEMENT-MODE AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation 
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