Project supported by the National Key Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB632103);the National Natural Science Foundation of China(Grant Nos.61176092,61036003,and 60837001);the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20110121110025);the Fundamental Research Funds for the Central Universities,China(Grant No.2010121056)
Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator (SOI) to form SiGe-on- insulator (SGOI) substrate is investigated. The non-homogeneity of SiGe on insulator is observed after...
supported by the National Natural Science Foundation of China(Grant Nos.61275040,60976046,60837001,61021003);the National Basic Research Program of China("973" Project)(Grant No.2012CB934204);by Chinese Academy of Sciences(Grant No.Y072051002)
The silicon vertical multi-junction (VMJ) solar cell has a good potential in high concentration, but it requires high quality front and back surface passivation layers to keep its high efficiency. We try to add dopa...
Project supported by the National Basic Research Program of China (Grant Nos.2012CB933503 and 2013CB632103);the National Natural Science Foundation of China (Grant Nos.61176092,61036003,and 60837001);the Ph.D.Program Foundation of the Ministry of Education of China (Grant No.20110121110025);the Fundamental Research Funds for the Central Universities,China (Grant No.2010121056)
Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge...
supported by the National Natural Science Foundation of China(Nos.60776046,60976046,60837001,61021003);the National Basic Research Program of China(No.2010CB933800)
The optimizations of the emitter region and the metal grid of a concentrator silicon solar cell are il- lustrated. The optimizations are done under 1 sun, 100 suns and 200 suns using the 2D numerical simulation tool T...
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092,61036003,and 60837001);the National Basic Research Program of China (Grant No. 2012CB933503);the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110121110025);the Fundamental Research Funds for the Central Universities,China (Grant No. 2010121056)
Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor (MOS) structures with and without a GeO2 passivation layer are investigated. The physical and the electrical properties are ch...
supported by the National High Technology Research and Development Program of China(No.2011AA010303);the National Natural Science Foundation of China(Nos.61090390,60837001,60877014,60776057)
A 10-channel, 200 GHz channel spacing InP arrayed waveguide grating was designed, and the deep ridge waveguide design makes it polarization independent. Under the technologies of molecular beam epitaxy, lithography, a...