PHOTONICS

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Chip-based quantum communications
《Journal of Semiconductors》2021年第9期29-36,共8页Qingqing Wang Yun Zheng Chonghao Zhai Xudong Li Qihuang Gong Jianwei Wang 
support from the Natural Science Foundation of China(61975001);National Key R&D Program of China(2018YFB1107205);Beijing Natural Science Foundation(Z190005);the Key R&D Program of Guangdong Province(2018B030329001).
Quantum communications aim to share encryption keys between the transmitters and receivers governed by the laws of quantum mechanics.Integrated quantum photonics offers significant advantages of dense integration,high...
关键词：quantum communications quantum networks integrated quantum photonics 
A review:Photonics devices,architectures,and algorithms for optical neural computing被引量：13
《Journal of Semiconductors》2021年第2期64-79,共16页Shuiying Xiang Yanan Han Ziwei Song Xingxing Guo Yahui Zhang Zhenxing Ren Suhong Wang Yuanting Ma Weiwen Zou Bowen Ma Shaofu Xu Jianji Dong Hailong Zhou Quansheng Ren Tao Deng Yan Liu Genquan Han Yue Hao 
This work was supported in part by the National Outstanding Youth Science Fund Project of National Natural Science Foundation of China(62022062);the National Natural Science Foundation of China(61974177,61674119);the Fundamental Research Funds for the Central Universities.
The explosive growth of data and information has motivated various emerging non-von Neumann computational approaches in the More-than-Moore era.Photonics neuromorphic computing has attracted lots of attention due to t...
关键词：photonics neuron photonic STDP photonic spiking neural network optical reservoir computing optical convolutional neural network neuromorphic photonics 
Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate被引量：5
《Journal of Semiconductors》2019年第10期36-44,共9页Shujie Pan Victoria Cao Mengya Liao Ying Lu Zizhuo Liu Mingchu Tang Siming Chen Alwyn Seeds Huiyun Liu 
financial support from the UK EPSRC under grant No. EP/P006973/1;the EPSRC National Epitaxy Facility European project H2020-ICT-PICTURE (780930);the Royal Academy of Engineering (RF201617/16/28);Investissments d’avenir (IRT Nanoelec: ANR-10-IRT-05 and Need for IoT: ANR-15-IDEX-02);the Chinese Scholarship Council for funding
In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lase...
关键词：QUANTUM DOTS silicon PHOTONICS EPITAXIAL GROWTH SEMICONDUCTOR laser 
Perspective:optically-pumped Ⅲ–Ⅴ quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates被引量：2
《Journal of Semiconductors》2019年第10期45-53,共9页Wenqi Wei Qi Feng Zihao Wang Ting Wang Jianjun Zhang 
financial support was provided by the National Natural Science Foundation of China (Nos. 61635011, 11574356, 11434010, 61804177 and 11804382);National Key Research and Development Program of China (Nos. 2016YFA0300600 and 2016YFA0301700);Key Research Program of Frontier Sciences, CAS (No. QYZDB-SSW-JSC009);Ting Wang was supported by the Youth Innovation Promotion Association of CAS (No. 2018011)
Direct epitaxial growthⅢ–Ⅴquantum dot(QD)structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photoni...
关键词：quantum DOTS silicon PHOTONICS EPITAXIAL growth semiconductor lasers 
Recent advances of heterogeneously integrated Ⅲ–Ⅴ laser on Si被引量：7
《Journal of Semiconductors》2019年第10期54-64,共11页Xuhan Guo An He Yikai Su 
supported by Natural Science Foundation of China (NSFC) under Grant 61805137;Natural Science Foundation of Shanghai under Grant 19ZR1475400;Shanghai Sailing Program under Grant 18YF1411900;the Open Project Program of Wuhan National Laboratory for Optoelectronics No. 2018WNLOKF012
Due to the indirect bandgap nature,the widely used silicon CMOS is very inefficient at light emitting.The integration of silicon lasers is deemed as the‘Mount Everest’for the full take-up of Si photonics.The major c...
关键词：HETEROGENEOUS INTEGRATION LASERS silicon PHOTONICS INTEGRATED CIRCUITS 
Ⅲ–Ⅴ compound materials and lasers on silicon
《Journal of Semiconductors》2019年第10期65-73,共9页Wenyu Yang Yajie Li Fangyuan Meng Hongyan Yu Mengqi Wang Pengfei Wang Guangzhen Luo Xuliang Zhou Jiaoqing Pan 
supported by the National Key Technology R&D Program (Grant No. 2018YFA0209001);Frontier Science Research Project of CAS (Grant No. QYZDY-SSWJSC021)
Silicon-based photonic integration has attracted the interest of semiconductor scientists because it has high luminous efficiency and electron mobility.Breakthroughs have been made in silicon-based integrated lasers o...
关键词：INTEGRATED PHOTONICS HYBRID LASER SILICON 
InP-based monolithically integrated few-mode devices
《Journal of Semiconductors》2018年第10期1-9,共9页Dan Lu Yiming He Zhaosong Li Lingjuan Zhao Wei Wang 
Project supported by the State Key Development Program for Basic Research of China(No.2014CB340102);the National Key Research&Development(R&D)Plan(No.2016YFB0402301);the National Natural Science Foundation of China(No.61335009)
Mode-division multiplexing（MDM） has become an increasingly important technology to further increase the transmission capacity of both optical-fiber-based communication networks, data centers and waveguidebased on-ch...
关键词：mode division multiplexing mode converter mode multiplexer few mode transmitters photonics in-tegrated circuit 
Emerging technologies in Si active photonics被引量：5
《Journal of Semiconductors》2018年第6期1-29,共29页Xiaoxin Wang Jifeng Liu 
Silicon photonics for synergistic electronic-photonic integration has achieved remarkable progress in the past two decades. Active photonic devices, including lasers, modulators, and photodetectors, are the key chal- ...
关键词：silicon photonics laser MODULATOR PHOTODETECTOR single photon detection electronic-photonic integ- ration 
Recent progress in GeSn growth and GeSn-based photonic devices被引量：3
《Journal of Semiconductors》2018年第6期76-81,共6页Jun Zheng Zhi Liu Chunlai Xue Chuanbo Li Yuhua Zuo Buwen Cheng Qiming Wang 
Project supported by the Beijing Natural Science Foundation(No.4162063);the Youth Innovation Promotion Association of CAS(No.2015091)
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content ex- ceeds 6%. It shows great potential for laser use in optoelectronic integration circuits （OEIC） on account of it...
关键词：GeSn material growth Si photonics optoelectronic integration 
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