LINEARITY

作品数：173被引量：141H指数：5
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Oneε-Ga_(2)O_(3)-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity被引量：1
《Chinese Physics B》2023年第5期158-163,共6页安跃华 高震森 郭雨 张少辉 刘增 唐为华 
the National Natural Science Foundation of China(Ganrt No.62004047)。
Theε-Ga_(2)O_(3) thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition(MOCVD)method,and then was used to fabricate a deep-ultraviolet(DUV)photodetector(PD).Theε-Ga_(2)O_(3) thin f...
关键词：metastable Ga_(2)O_(3) photocurrent gain LINEARITY DUV detection 
Dynamic range and linearity improvement for zero-field single-beam atomic magnetometer被引量：1
《Chinese Physics B》2022年第11期284-290,共7页Kai-Feng Yin Ji-Xi Lu Fei Lu Bo Li Bin-Quan Zhou Mao Ye 
Project supported by the National Key R&D Program of China(Grant No.2018YFB2002405);the National Natural Science Foundation of China(Grant No.61903013)。
Zero-field single-beam atomic magnetometers with transverse parametric modulation for ultra-weak magnetic field detection have attracted widespread attention recently.In this study,we present a comprehensive response ...
关键词：atomic magnetometer dynamic range linearity error response signal stability 
High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications
《Chinese Physics B》2022年第2期547-551,共5页Pengfei Wang Minhan Mi Meng Zhang Jiejie Zhu Yuwei Zhou Jielong Liu Sijia Liu Ling Yang Bin Hou Xiaohua Ma Yue Hao 
supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the Fundamental Research Funds for the Central Universities;the Innovation Fund of Xidian University;the National Natural Science Foundation of China(Grant No.61904135);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Research and Development Plan of Key Fields in Guangzhou(Grant No.202103020002)。
We demonstrated an AlGaN/GaN high electron mobility transistor(HEMT)namely double-Vthcoupling HEMT(DVC-HEMT)fabricated by connecting different threshold voltage(Vth)values including the slant recess element and planar...
关键词：ALGAN/GAN LINEARITY 1-dB compression point millimeter-wave application 
Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, linearity, and harmonic distortion analysis
《Chinese Physics B》2020年第10期556-565,共10页Hui-Fang Xu Xin-Feng Han Wen Sun 
Project supported by the Natural Science Research Key Project of Universities of Anhui Province,China(Grant No.KJ2017A502);the Introduced Talent Project of Anhui Science and Technology University,China(Grant No.DQYJ201603);the Excellent Talents Supported Project of Colleges and Universities,China(Grant No.gxyq2018048)。
The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the...
关键词：dopingless tunnel field effect transistor line tunneling lincarity parameters 
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
《Chinese Physics B》2018年第4期432-436,共5页Ting-Ting Liu Kai Zhang Guang-Run Zhu Jian-Jun Zhou Yue-Chan Kong Xin-Xin Yu Tang-Sheng Chen 
Project supported by the National Natural Science Foundation of China(Grant Nos.61504125,61474101,and 61505181)
We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long ...
关键词：AlGaN/GaNFinFETs output power density linearity characteristics 
MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs被引量：1
《Chinese Physics B》2007年第11期3494-3497,共4页程知群 蔡勇 刘杰 周玉刚 Lau Kei May Chen J.Kevin 
Project supported by the National Natural Science Foundation of China （Grant No 60476035）.
A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed,...
关键词：slow noise amplifier composite-channel A1GaN/GaN HEMTs LINEARITY 
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