HOLES

作品数：260被引量：382H指数：9
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Spin-dependent tunneling of light and heavy holes with electric and magnetic fields
《Journal of Semiconductors》2018年第11期8-12,共5页L.Bruno Chandrasekar M.Karunakaran K.Gnanasekar 
The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field a...
关键词：HETEROSTRUCTURE reverse bias current density 
Thin silicon layer SOI power device with linearly-distance fixed charge islands
《Journal of Semiconductors》2015年第5期41-45,共5页左园 李海鸥 翟江辉 唐宁 宋树祥 李琦 
Project supported by the Guangxi Natural Science Foundation of China(No.2013GXNSFAA019335);the Guangxi Department of Education Project(No.201202ZD041);the China Postdoctoral Science Foundation Project(Nos.2012M521127,2013T60566);the National Natural Science Foundation of China(Nos.61361011,61274077,61464003)
A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed （LFI LDMOS）. A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide laye...
关键词：linearly-distanced fixed charge island breakdown voltage dynamic holes ON-RESISTANCE 
Analytical model for high-voltage SOI device with composite-k dielectric buried layer
《Journal of Semiconductors》2013年第9期67-72,共6页范杰 张波 罗小蓉 汪志刚 李肇基 
supported by the National Natural Science Foundation of China(Nos.60976060,61176069);the National Key Laboratory of Analogue Integrated Circuit,China(No.9140C090304110C0905)
An analytical model for a novel high voltage silicon-on-insulator device with composite-k （relative per mittivity） dielectric buried layer （CK SOl） is proposed. In this structure, the composite-k buried layer is c...
关键词：composite-k dielectric accumulated holes potential well electric field SOI 
Improvement of carrier distribution in dual wavelength light-emitting diodes
《Journal of Semiconductors》2013年第5期87-89,共3页司朝 魏同波 张宁 马骏 王军喜 李晋闽 
supported by the National Natural Science Foundation of China(No.61274040)
The effect of different barriers between green and blue light regions in dual wavelength light emitting diodes was studied. Compared with a traditional sample, electroluminescence and photoluminescence spectra of the ...
关键词：LED dual wavelength quantum barrier holes injection carrier distribution 
Substrate Hot Holes Injection Induced Breakdown Characteristics of Thin Gate Oxides
《Journal of Semiconductors》2001年第10期1240-1245,共6页刘红侠 郝跃 
国防预研基金资助项目 (项目号 OOJ8.4.3DZ0 1)~~
A substrate hot holes injection method is used to quantitatively examine the roles of electrons and holes separately in thin gate oxides breakdown.The shift of threshold voltage under different stress is discussed.It ...
关键词：substrate hot holes thin gate oxides charge to breakdown MODEL 
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