云南高校图书馆联盟文献共享服务平台- HETEROJUNCTION

HETEROJUNCTION: 作品数：1026被引量：1823H指数：17; 导出分析报告; 相关领域：电子电信电气工程更多>>; 相关作者：李娣施伟东区泽堂刘英贺捷更多>>; 相关机构：清华大学中国科学技术大学郑州大学厦门大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金广东省自然科学基金更多>>

Band alignment of heterojunctions formed by PtSe_(2)with doped GaN: 《Chinese Physics B》2025年第4期535-542,共8页Zhuoyang Lv Guijuan Zhao Wanting Wei Xiurui Lv Guipeng Liu; Project supported by the National Natural Science Foundation of China(Grant No.61874108);the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2024-04);the Gansu Provincial Scientific and Technologic Planning Program(Grant No.22ZD6GE016).; In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence ...; 关键词：van der Waals heterojunction x-ray photoelectron spectroscopy band alignment gallium nitride platinum diselenide

Highly responsive photodetectors based on NiPS_(3)/WS_(2)van der Waals type-Ⅱheterostructures: 《Chinese Physics B》2025年第2期394-399,共6页Zhiteng Li Yian Wang Zhenming Qiu Lin Wang Xiaofeng Liu Zhengwei Chen Xiao Zhang; Project supported by the National Key Research and Development Program of China(Grant No.2022YFE0109200);the National Natural Science Foundation of China(Grant Nos.12074013 and 62175210)。; A heterostructure photodetector composed of few-layer NiPS_(3)/WS_(2)is made by using mechanical exfoliation and micro-nano fabrication techniques.The photodetector exhibits a broad-band response wavelengths of rangin...; 关键词：HETEROJUNCTION PHOTODETECTOR NiPS_(3) WS_(2)

Magnetic proximity effect in the two-dimensional ε-Fe_(2)O_(3)/NbSe_(2)heterojunction: 《Chinese Physics B》2024年第2期492-497,共6页车冰玉胡国静朱超郭辉吕森浩刘轩冶吴康赵振潘禄禄祝轲齐琦韩烨超林晓李子安申承民鲍丽宏刘政周家东杨海涛高鸿钧; The work is supported by the National Key Research and Development Program of China(Grant No.2022YFA1204104);the National Natural Science Foundation of China(Grant No.61888102);the Chinese Academy of Sciences(Grant Nos.ZDBS-SSW-WHC001 and XDB33030100).; Two-dimensional(2D)magnet/superconductor heterostructures can promote the design of artificial materials for exploring 2D physics and device applications by exotic proximity effects.However,plagued by the low Curie te...; 关键词：two-dimensional heterojunctions magnetic proximity effect non-layered magnetic nanosheet spin-orbit interaction

Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction: 《Chinese Physics B》2023年第12期509-516,共8页陈珊珊张新昊王广灿陈朔马和奇孙天瑜满宝元杨诚; Project supported by the National Natural Science Foundation of China (Grant Nos.11874244 and 11974222)。; Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area...; 关键词：ferroelectric tunnelling junction metal/ferroelectric/semiconductor tunnelling electroresistance optoelectronic properties

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn_(5)Se_(8)/t-Se heterojunction: 《Chinese Physics B》2023年第11期134-139,共6页李康许磊陆启东胡鹏; Project supported by the National Natural Science Foundation of China (Grant No. 51803168);the Key Research and Development Program of Shaanxi Province (Grant No. 2022GY-356);the Youth Innovation Team of Shaanxi Universities。; A type Ⅱ p–n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn_(5)Se_(8)(AIS) exhibits a large optical absorption coeffici...; 关键词：AgIns Seg/t-Se heterojunction self-power broadband photodetector

Simulation of optical and electrical synaptic functions in MoS_(2)/α-In_(2)Se_(3) heterojunction memtransistors: 《Chinese Physics B》2023年第11期562-569,共8页相韬陈凤翔李晓莉王小东闫誉玲汪礼胜; Project supported by the National Natural Science Foundation of China (Grant No. 51702245)。; Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In2Se3and MoS2were t...; 关键词：α-In_(2)Se_(3) MoS_(2) dual-gate control by electric and light neural synaptic function simulation

An accurate analytical surface potential model of heterojunction tunnel FET: 《Chinese Physics B》2023年第10期731-737,共7页关云鹤黎欢陈海峰黄思伟; Project supported in part by the National Natural Science Foundation of China (Grant No. 62104192);in part by the Natural Science Basic Research Program of Shaanxi Province (Grant No. 2021JQ-717)。; Based on the accurate and efficient thermal injection method, we develop a fully analytical surface potential model for the heterojunction tunnel field-effect transistor(H-TFET). This model accounts for both the effec...; 关键词：surface potential model thermal injection method tunnel field-effect transistor HETEROJUNCTION

Design and investigation of doping-less gate-all-around TFET with Mg_(2)Si source material for low power and enhanced performance applications: 《Chinese Physics B》2023年第10期615-624,共10页Pranav Agarwal Sankalp Rai Rakshit Y.A Varun Mishra; Metal–oxide–semiconductor field-effect transistor(MOSFET)faces the major problem of being unable to achieve a subthreshold swing(SS)below 60 mV/dec.As device dimensions continue to reduce and the demand for high swi...; 关键词：SUBTHRESHOLD Mg_(2)Si HETEROJUNCTION charge plasma gate-all-around(GAA)

Design optimization of a silicon-germanium heterojunction negative capacitance gate-all-around tunneling field effect transistor based on a simulation study: 《Chinese Physics B》2023年第9期436-442,共7页魏伟杰吕伟锋韩颖张彩云谌登科; supported by the Zhejiang Provincial Natural Science Foundation of China(Grant No.LY22F040001);the National Natural Science Foundation of China(Grant No.62071160);the Graduate Scientific Research Foundation of Hangzhou Dianzi University。; The steep sub-threshold swing of a tunneling field-effect transistor(TFET)makes it one of the best candidates for lowpower nanometer devices.However,the low driving capability of TFETs prevents their application in in...; 关键词：negative capacitance(NC) gate-all-around(GAA) silicon-germanium heterojunction gate-tosource overlap(SOL)

A SiC asymmetric cell trench MOSFET with a split gate and integrated p^(+)-poly Si/SiC heterojunction freewheeling diode: 《Chinese Physics B》2023年第5期697-704,共8页蒋铠哲张孝冬田川张升荣郑理强赫荣钊沈重; Major Science and Technology Projects of Hainan Province,China(Grant Nos.ZDKJ2021023 and ZDKJ2021042);Hainan Provincial Natural Science Foundation of China(Grant Nos.622QN285 and 521QN210)。; A new SiC asymmetric cell trench metal–oxide–semiconductor field effect transistor(MOSFET)with a split gate(SG)and integrated p^(+)-poly Si/SiC heterojunction freewheeling diode(SGHJD-TMOS)is investigated in this ar...; 关键词：split gate(SG) heterojunction freewheeling diode(HJD) SiC asymmetric cell trench MOSFET turn-on loss turn-off loss

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