云南高校图书馆联盟文献共享服务平台- HETEROJUNCTION

HETEROJUNCTION: 作品数：1026被引量：1823H指数：17; 导出分析报告; 相关领域：电子电信电气工程更多>>; 相关作者：李娣施伟东区泽堂刘英贺捷更多>>; 相关机构：清华大学中国科学技术大学郑州大学厦门大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金广东省自然科学基金更多>>

High carrier collection efficiency in graphene/GaAs heterojunction photodetectors: 《Journal of Semiconductors》2025年第4期81-87,共7页Baorui Fang Ye Tian Zongmin Ma; supported by the National Natural Science Foundation of China(62375279);Suzhou Industrial Science and Technology Program(SYG202340,SJC2023004);Distinguished Young Scholar Fund of Natural Science Foundation of Jiangsu Province(BK20240125).; In the rapidly evolving field of modern technology,near-infrared(NIR)photodetectors are extremely crucial for efficient and reliable optical communications.The graphene/GaAs Schottky junction photodetector leverages g...; 关键词：GRAPHENE GAAS Schottky junction interdigitated electrode

Semiconductor-based direct current triboelectric nanogenerators and its application: 《Journal of Semiconductors》2024年第12期33-45,共13页Xin Shi Weiguo Wang Jun Wang Jian Li Huamin Chen; supported by the National Natural Science Foundation of China (Nos.52201043,12174172);the Natural Science Foundation of Fujian (No.2023J011396);the Fuzhou City Science and Technology Cooperation Project (No.2022-R-003);Fuzhou Industry Technology Innovation Center for Flexible Functional Materials.; Triboelectric nanogenerator(TENG)utilizing tribovoltaic effect can directly produce direct current with high energy conversion efficiency,which expands their application in semiconductor devices and self-powered syste...; 关键词：triboelectric nanogenerator tribovoltaic effect work function SEMICONDUCTOR HETEROJUNCTION

Growth,characterization,and transport calculation of Ge/SiGe heterojunction:strategy for the growth of undoped Ge quantum wells: 《Journal of Semiconductors》2024年第12期62-70,共9页Yiwen Zhang Jun Deng Zonghu Li Xinyou Liu Haiou Li Baochuan Wang Jun Luo Zhenzhen Kong Gang Cao Guoping Guo Chao Zhao Guilei Wang; supported by the Innovation Program for Quantum Science and Technology (Project ID.2021ZD0302301);the National Natural Science Foundation of China (Grant No.6240033549).; Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based qubits.The varying compressive strains within these quantum wells profoundly influence the physical characteristics of...; 关键词：germanium quantum wells RP-CVD multi-strained quantum wells MAGNETO-TRANSPORT hetero-structure

Flexible biomimetic olfactory neurons based on organic heterojunction: 《Journal of Semiconductors》2024年第12期80-86,共7页Tianyang Feng Jialin Meng Hang Xu Yafen Yang Tianyu Wang Hao Zhu Qingqing Sun David Wei Zhang Lin Chen; supported by the National Key Research and Development Program of China (2021YFA120260);the NSFC (92064009,22175042,12474071);the Science and Technology Commission of Shanghai Municipality (22501100900);Natural Science Foundation of Shandong Province (ZR2024YQ051);the China Postdoctoral Science Foundation (2022TQ0068,2023M740644);the Shanghai Sailing Program (23YF1402200,23YF1402400).; Simulating the human olfactory nervous system is one of the key issues in the field of neuromorphic computing.Olfac-tory neurons interact with gas molecules,transmitting and storing odor information to the olfactory c...; 关键词：olfactory neurons organic transistor gas-modulated flexible electronic device

Self-powered PEDOT:PSS/Sn:α-Ga_(2)O_(3) heterojunction UV photodetector via organic/inorganic hybrid ink engineering被引量：1: 《Journal of Semiconductors》2024年第12期120-128,共9页Yifan Yao Suhao Yao Jiaqing Yuan Zeng Liu Maolin Zhang Lili Yang Weihua Tang; supported by the National Key Research and Development Program of China (Grant No.2022YFB3605404);the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos.62204125,62305171,62204126,and 62304113);the Joints Fund of the National Natural Science Foundation of China (Grant No.U23A20349);the Natural Science Foundation of Jiangsu Province (Grant No.BK20230361);the Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications (Grant No.XK1060921119);the Jiangsu Provincial Team of Innovation and Entrepreneurship (Grant No.JSSCTD202351).; In this work,a PEDOT:PSS/Sn:α-Ga_(2)O_(3) hybrid heterojunction diode(HJD)photodetector was fabricated by spin-coat-ing highly conductive PEDOT:PSS aqueous solution on the mist chemical vapor deposition(Mist-CVD)grow...; 关键词：Sn-dopedα-Ga_(2)O_(3) spin-coated PEDOT:PSS heterojunction photodetector ink engineering

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors: 《Journal of Semiconductors》2024年第10期54-59,共6页Xiao Li Zhikang Ma Jinxiong Li Wengao Pan Congwei Liao Shengdong Zhang Zhuo Gao Dong Fu Lei Lu; supported by National Key Research and Development Program(2021YFB3600802);Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006);Guangdong Basic and Applied Basic Research Foundation(2022A1515110029); This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojun...; 关键词：oxide semiconductor thin-film transistors two-dimensional electron gas HETEROJUNCTION high mobility

ZnSb/Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction for flexible near-infrared photodetector arrays被引量：3: 《Journal of Semiconductors》2024年第5期99-105,共7页Chuqiao Hu Ruiqing Chai Zhongming Wei La Li Guozhen Shen; supported by National Natural Science Foundation of China(51672308,51972025,61888102,and 62004187).; Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene base...; 关键词：ZnSb nanoplates Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction flexible photodetector image sensing

Improvement of Ga_(2)O_(3)vertical Schottky barrier diode by constructing NiO/Ga_(2)O_(3)heterojunction: 《Journal of Semiconductors》2024年第4期63-68,共6页Xueqiang Ji Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li; supported by BUPT Excellent Ph.D. Students Foundation (CX2023301);in part by the National Natural Science Foundation of China (62204019); The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further...; 关键词：Ga_(2)O_(3) Schottky barrier diode NiO/Ga_(2)O_(3)heterojunction

Bidirectional rectifier with gate voltage control based on Bi_(2)O_(2)Se/WSe_(2)heterojunction: 《Journal of Semiconductors》2024年第1期63-70,共8页Ruonan Li Fangchao Lu Jiajun Deng Xingqiu Fu Wenjie Wang He Tian; This work was supported by the National Natural Science Foundation of China(61704054,92161115,62374099,and 62022047);the Fundamental Research Funds for the Central Universities(JB2020MS042 and JB2019MS051).; Two-dimensional(2D)WSe_(2)has received increasing attention due to its unique optical properties and bipolar behavior.Several WSe_(2)-based heterojunctions exhibit bidirectional rectification characteristics,but most ...; 关键词：Bi_(2)O_(2)Se WSe_(2) HETEROJUNCTION bidirectional rectification optoelectronic devices

Photodetector based on Ruddlesden-Popper perovskite microwires with broader band detection: 《Journal of Semiconductors》2023年第8期41-47,共7页Yongxu Yan Zhexin Li Zheng Lou; This work was supported by the National Science Foundation of China(NSFC),(Grant No.62022079);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2020115).; Recently,the two-dimensional(2D)form of Ruddlesden-Popper perovskite(RPP)has been widely studied.However,the synthesis of one-dimensional(1D)RPP is rarely reported.Here,we fabricated a photodetector based on RPP micro...; 关键词：Ruddlesden-Popper perovskite MICROWIRES PHOTODETECTOR CORE-SHELL HETEROJUNCTION

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