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Studying mechanism of anisotropic crack generation on C-,R-,A-,and M-planes of sapphire during ultra-precision orthogonal cutting using a visualized slip/fracture activation model: 《Nanotechnology and Precision Engineering》2024年第4期47-64,共18页Suk Bum Kwon Sangkee Min; supported by the National Science Foundation under Grant No.CMMI-1844821;supported by the NSF through the University of Wisconsin Materials Research Science Center(Grant No.DMR-1720415).; With the growing demand for the fabrication of microminiaturized components,a comprehensive understanding of material removal behavior during ultra-precision cutting has become increasingly significant.Single-crystal ...; 关键词：Anisotropic behavior Crack morphology Slip/fracture activation model Single-crystal sapphire Ultra-precision machining

Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer: 《Chinese Physics Letters》2016年第6期150-152,共3页许晟瑞赵颖姜腾张进成李培咸郝跃; Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108;the Fundamental Research Funds for the Central Universities under Grant No JB141101;the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01; The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r...; 关键词：GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlaye in of is by Improved Semipolar on

The growth and properties of an m-plane InN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition: 《Science China(Physics,Mechanics & Astronomy)》2012年第7期1249-1252,共4页XIE ZiLi ZHANG Rong FU DeYi LIU Bin XIU XiangQian HUA XueMei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG YouDou; supported by the Special Funds for the Major State Basic Research Project (Grant No. 2011CB301900);the High-Tech Research Project (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60721063,60906025, 60936004 and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos. BK2011010, BK2009255, BK2010178 andBK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-electronics; The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer ...; 关键词：crystal structure X-ray diffraction vapor-phase epitaxy INN semiconducting indium compound

High-brightness polarized light-emitting diodes被引量：2: 《Light(Science & Applications)》2012年第1期72-78,共7页Elison Matioli Stuart Brinkley Kathryn M Kelchner Yan-Ling Hu Shuji Nakamura Steven DenBaars James Speck Claude Weisbuch; The experimental part of this work was performed at University of California,Santa Barbara.This study is based upon work partially supported as part of the‘Center for Energy Efficient Materials’at University of California,Santa Barbara,an Energy Frontier Research Center funded by the US Department of Energy,Office of Science,Office of Basic Energy Sciences under Award Number DE-SC0001009 and by the Solid State Lighting and Energy Center(SSLEC)at the University of California,Santa Barbara.; Light-emitting diodes are becoming the alternative for future general lighting applications,with huge energy savings compared to conventional light sources owing to their high efficiency and reliability.Polarized ligh...; 关键词：GAN LEDS M-PLANE polarized light

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate: 《Journal of Semiconductors》2009年第9期13-15,共3页田密修向前张荣华雪梅刘战辉韩平谢自力郑有炓; Project supported by State Key Development Program for Basic Research of China(No.2006CB6049);the National Hi-Tech Researchand Development Program of China(No.2006AA03A142);the National Natural Science Foundation of China(Nos.60721063,60731160628,60820106003); A 0.09 mm m-plane GaN film is deposited via hydride vapor phase epitaxy （HVPE） on a γ-LiAlO2 substrate. To research the anisotropy between directions with different angles with the c-axis in the m plane, photolumin...; 关键词：γ-LiAlO2 GAN HVPE ANISOTROPY PL spectra

Strain effects on the polarized optical properties of InGaN with different In compositions: 《Chinese Physics B》2009年第6期2603-2609,共7页陶仁春于彤军贾传宇陈志忠秦志新张国义; Project supported by the National Natural Science Foundation of China (Grant Nos 60676032,60577030 and 60776042);National Key Basic Research Special Foundation of China (Grant No TG 2007CB307004); Strain effects on the polarized optical properties of c-plane and m-plane InxGa1-xN were discussed for different In compositions （x = 0, 0.05, 0.10, 0.15） by analyzing the relative oscillator strength （ROS） and en...; 关键词：GaN polarization degree M-PLANE relative oscillator strength

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO2被引量：2: 《Chinese Physics Letters》2008年第7期2614-2617,共4页谢自力张荣韩平周圣明刘斌修向前陈鹏施毅郑有炓; The National Basic Research Programme of China under Grant No 2006CB6049, the National High-Tech Research and Development Programme of China under Grant Nos 2006AA03A103, 2006AA03Al18, 2006AA03A142, the National Natural Science Foundation of China under Grant Nos 60390072, 60676057, 60421003, The Research Fund for the Doctoral Programme of Higher Education of China （20050284004）; We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a 7-LiAlO2 （100） substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The ...; 关键词：the power-law exponents precipitation durative abrupt precipitation change

非极性面m-plane蓝紫光雷射二极体剖析: 《光連：光電產業與技術情報》陳穎慧; 选择非极性表面取代原有c-plane长晶技术最大的优点是可提升雷射二极体的外部量子效应，以及所产生的偏极化发光可使雷射操作更有效率。

Growth studies of m-GaN layers on LiAlO2 by MOCVD: 《Chinese Physics B》2006年第11期2706-2709,共4页邹军刘成祥周圣明王军周建华黄涛华韩平谢自力张荣; This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman ...; 关键词：LiAlO2 substrate m-plane GaN layer optical properties

Spectra Analysis of a Novel Ti-Doped LiAlO2 Single Crystal被引量：5: 《Chinese Physics Letters》2005年第10期2622-2625,共4页邹军周圣明李杨王军张连翰徐军; LiAlO2 single crvstals doped with Ti at concentration 0.2at.% are grown by the Czochralskl technique with dimensions φ42×55mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluoresc...; 关键词：M-PLANE GAN(1(1)OVER-BAR-00) NITRIDE SEMICONDUCTORS FREE ELECTROSTATICFIELDS GAN FILMS GROWTH GAMMA-LIALO2(100) DEPOSITION ALUMINATE LIGAO2

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