INTERMIXING

作品数:12被引量:10H指数:2
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相关领域:电子电信更多>>
相关作者:周帆赵玲娟王圩朱洪亮刘泓波更多>>
相关机构:北京化工大学中国科学院江苏师范大学更多>>
相关期刊:《Communications in Theoretical Physics》《Chinese Physics B》《Semiconductor Photonics and Technology》《Journal of Semiconductors》更多>>
相关基金:国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划中国博士后科学基金更多>>
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Simple Approach on Intermixing Solar and Wind Energy and Minimizing Their Intermittent Effect被引量:1
《Journal of Shanghai Jiaotong university(Science)》2019年第1期24-30,共7页KARNI Awais LUO Liwen MUMTAZ Muhammad Adnan ZAKI Atta ul Munim 
Renewable energy resources especially wind and solar energy are emerging as the modern power sources to electrify remote areas. The main reason behind their emergence is due to their environment-friendly behavior,unli...
关键词:INTERMIXING intermittency RENEWABLE energy TURBINE correlation hybrid system 
Van der Waals interfacial bonding and intermixing in GeTe-Sb2Te3-based superlattices被引量:1
《Nano Research》2018年第3期1676-1686,共11页Andriy Lotnyk Isom Hilmi Ulrich Ross Bernd Rauschenbach 
Interfacial phase change memory (iPCM) based on GeTe and Sb2Te3 superlattices (SLs) is an emerging contender for non-volatile data storage applications. A detailed knowledge of the atomic structure of these materi...
关键词:interfacial phase change memory (iPCM) thin films INTERMIXING Cs-corrected scanningtransmission electron microscopy 
On Improving Accuracy of Finite-Element Solutions of the Effective-Mass Schr¨odinger Equation for Interdiffused Quantum Wells and Quantum Wires
《Communications in Theoretical Physics》2016年第1期105-113,共9页D.B.Topalovi V.V.Arsoski S.Pavlovic N.A.Cukaric M.Z.Tadic F.M.Peeters 
Supported by the Ministry of Education,Science,and Technological Development of Serbia and the Flemish fund for Scientific Research(FWO Vlaanderen)
We use the Galerkin approach and the finite-element method to numerically solve the effective-mass Schr¨odinger equation.The accuracy of the solution is explored as it varies with the range of the numerical domain.Th...
关键词:intermixing quantum well quantum wire Schrodinger equation finite element adaptive 
Enhanced Impurity-Free Intermixing Bandgap Engineering for InP-Based Photonic Integrated Circuits被引量:2
《Chinese Physics Letters》2014年第4期64-67,共4页CUI Xiao ZHANG Can LIANG Song ZHU Hong-Liang HOU Lian-Ping 
Supported by the National Natural Science Foundation of China under Grant Nos 61320106013, 61021003 and 61090392.
hnpurity-free intermixing of InGaAsP multiple quantum wells (MQW) using sputtering Cu/Si02 layers followed by rapid thermal processing (RTP) is demonstrated. The bandgap energy could be modulated by varying the sp...
The effect of deposition temperature on the intermixing and microstructure of Fe/Ni thin film被引量:1
《Chinese Physics B》2010年第12期400-404,共5页陈尚达 王涛 郑德立 周益春 
Project supported by the National Natural Science Foundation for Young Scientists of China (Grant No. 10702058);the China Postdoctoral Science Foundation (Grant No. 20090451100)
The physical vapour deposition of Ni atoms on α-Fe(001) surface under different deposition temperatures were simulated by molecular dynamics to study the intermixing and microstructure of the interracial region. Th...
关键词:molecular dynamics physical vapour deposition Ni/Fe thin film temperature effect 
Frequency and wavelength tunable optical microwave source based on a distributed Bragg reflector self-pulsation laser被引量:2
《Journal of Semiconductors》2010年第6期54-56,共3页刘扬 孙瑜 孔端花 王宝军 边静 安欣 赵玲娟 王圩 
Project supported by the National High Technology Research and Development Program of China(Nos.2006AA01Z256, 2007AA03Z419,2007AA03Z417);the State Key Development Program for Basic Research of China(Nos.2006CB604901, 2006CB604902);the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021).
A frequency and wavelength tunable self-pulsation laser based on DBR laser devices is reported for the first time.This laser generates continuous tunable optical microwave in the range of 1.87-21.81 GHz with 3-dB line...
关键词:distributed Bragg reflector laser diode self-pulsation laser optical microwave sources quantum-well intermixing 
Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing
《Chinese Physics Letters》2008年第10期3670-3672,共3页刘泓波 赵玲娟 潘教青 朱洪亮 周帆 王宝军 王圩 
Supported by the National Natural Science Foundation of China under Grant Nos 90401025, 60736036, 60706009, 60777021, the National Basic Research Programme of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Programme of China under Grant Nos 2006AA01Z256, 2007AA03Z419, and 2007AA03Z417.
We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selectivea...
关键词:the power-law exponents precipitation durative abrupt precipitation change 
Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing
《Journal of Semiconductors》2008年第9期1657-1660,共4页刘泓波 赵玲娟 阚强 潘教青 王路 朱洪亮 周帆 王圩 
the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021);the State Key Development Program for Basic Research of China(Nos.2006CB604901,2006CB604902);the National High Technology Research and Development Program of China(Nos.2006AA01Z256,2007AA03Z419,2007AA03Z417)~~
This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing (QWI) for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power...
关键词:tunable laser semiconductor-optical-amplifier ion implantation quantum-well intermixing 
Implant Depth Influence on InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation
《Chinese Physics Letters》2006年第4期919-921,共3页赵杰 陈杰 王永晨 韩德俊 
Supported by the National Natural Science Foundation of China under Grant No 60276013, and the Fund of Key Laboratory for Radiation Beam and Materials Modification, Beijing Normal University.
We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation by means of photoluminescence (PL). The ion implantation is performed at the energy of 120keV with the...
关键词:LASER STRUCTURES PHOTOLUMINESCENCE FABRICATION 
InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation被引量:2
《Semiconductor Photonics and Technology》2005年第4期217-220,共4页CHEN Jie ZHAO Jie WANG Yong-chen HAN De-jun 
NationalNaturalScienceFoundationofChina(60276013);FoundationofKeyLaboratoryofEducationMinistryfromBeijingNormalUniversity
A quantum well intermixing(QW1) investigation on double quantum well(DQW) structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing (RTA) was ca...
关键词:Ion implantation l InGaAsP/InP DOuble quantum well(DQW) Quantum well intermixing 
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