云南高校图书馆联盟文献共享服务平台- SUBMICRON

SUBMICRON: 作品数：139被引量：261H指数：9; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李青松王志强赵辉聂刚韩小彦更多>>; 相关机构：清华大学东南大学中国石油大学（华东）中南民族大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Nonlinear Raman-Nath diffraction in submicron-thick periodically poled lithium niobate thin film: 《PhotoniX》2024年第1期15-33,共19页Xiao-Ni Li Ling-Zhi Peng Yuan-Yuan Liu Li-Hong Hong De-Ming Hu Yuan-Yuan Zhao Xuan-Ming Duan Bao-Qin Chen Zhi-Yuan Li; support from Science and Technology Project of Guangdong(2020B010190001);National Natural Science Foundation of China(11974119);Guangzhou Science and Technology Plan Project(2023A04J1309).; Nonlinear Raman-Nath diffraction(NRND)is a unique diffraction pattern formed when a high-intensity laser interacts with a nonlinear microstructure bulky medium relying only on the transverse phase matching condition.H...; 关键词：NONLINEAR Second harmonic generation Periodically poled lithium niobate thin film Raman-Nath diffraction

Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications: 《Journal of Semiconductors》2016年第4期39-43,共5页Nacereddine Lakhdar Brahim Lakehal; We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave...; 关键词：gate engineering GaAs MESFET cut-off frequency short channel effects（SCEs） work function modeling

Numerical simulation of modulation to incident laser by submicron to micron surface contaminants on fused silica被引量：1: 《Chinese Physics B》2016年第1期632-639,共8页杨亮向霞苗心向李莉袁晓东晏中华周国瑞吕海兵郑万国祖小涛; supported by the National Natural Science Foundation of China(Grant No.61178018);the Ph.D.Funding Support Program of Education Ministry of China(Grant No.20110185110007); Modulation caused by surface/subsurface contaminants is one of the important factors for laser-induced damage of fused silica. In this work, a three-dimensional finite-difference time-domain （3D-FDTD） method is empl...; 关键词：fused silica laser-induced damage particulate contaminants MODULATION

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices被引量：1: 《Journal of Semiconductors》2015年第11期39-43,共5页武唯康安霞谭斐冯慧陈叶华刘静静张兴黄如; The effects of the physical damages induced by heavy ion irradiation on the performance of partiallydepleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are o...; 关键词：heavy ion displacement damages PDSOI performance degradation

Direct LED writing of submicron resist patterns： Towards the fabrication of individually-addressable InGaN sub-micron stripe-shaped LED arrays: 《Nano Research》2014年第12期1849-1860,共12页Zheng Gong Benoit Guilhabert Zhitao Chen Martin D. Dawson; Submicron stripe-shaped InGaN light-emitting diode （LED） arrays with individually addressable capabilities are demonstrated. The critical submicron- stripe metallic electrodes, which define the emission pattern, are...; 关键词：direct writing light-emitting diodes electroluminescence efficiency droop mask-free lithography

Direct Laser Writing Facility for Fabrication of Submicron Mask: 《Chinese Physics Letters》2014年第4期185-188,共4页ZHU Feng MA Jian-Yong; Supported by the Ministry of Science and Technology of China under Grant No 2012YQ170004, and the National Natural Science Foundation of China under Grant No 61307064.; Direct laser writing technique has become a well-established, multi-functional and flexible method for fabricating high quality diffractive optical elements. We propose and build a maskless direct laser writing system...

Tunneling in submicron CMOS single-photon avalanche diodes被引量：2: 《Chinese Optics Letters》2014年第1期66-68,共3页Mohammad Azim Karami Armin Amiri-Sani Mohammad Hamzeh Ghormishi; Tunneling is studied in two main single-photon avalanche diode （SPAD） topologies, which are r^-tub guard ring （NTGR） and p-tub guard ring （PTGR）. Device sinmlation, I - V measurements, and dark count calculation...; 关键词：Tunneling in submicron CMOS single-photon avalanche diodes CMOS SPAD

Heteroepitaxial growth of ZnO nanosheet bands on ZnCo204 submicron rods toward high-performance Li ion battery electrodes被引量：8: 《Nano Research》2013年第5期348-355,共8页Chan Woo Lee Seung-Deok Seo Dong Wook Kim Sangbaek Park Kyoungsuk Jin Dong-Wan Kim Kug Sun Hong; We report the direct synthesis of ZnC0204 and ZnO/ZnC0204 submicron rod arrays grown on Ni foil current collectors via an ammonia-evaporation-induced method by controlling the ratio of Zn to Co. These three-dimension...; 关键词：ZnCo204 submicron rods ZnO nanosheets hierarchicalheterostructure ammonia-evaporation-induced method Li ion battery

Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs被引量：2: 《Journal of Semiconductors》2013年第1期39-44,共6页梅博毕津顺卜建辉韩郑生; A bimodal effect of transconductance was observed in narrow channel PDSOI sub-micron H-gate PMOSFETs,which was accompanied with the degeneration of device performance.This paper presents a study of the transconductanc...; 关键词：TRANSCONDUCTANCE threshold voltage work function SILICON-ON-INSULATOR

Synthesis and Optical Properties of ZnO Nanoparticles in Submicron PS Hollow Reactors: 《Chinese Journal of Chemical Physics》2012年第6期719-724,I0004,共7页Xue-feng Huang Fei-fei Ju Mo-zhen Wang Xue-wu Ge; ZnO nanoparticles were first encapsulated in submicron PS hollow microspheres through two-step swelling process of core-shell structured PMMA/PS （PMMA： polymethyl methao- rylate） microspheres in acid-alkali solutio...; 关键词：ZnO/PS hybrid material Core-shell polymer SWELLING PS hollow microsphere Optical property

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