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作品数：22被引量：16H指数：2
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相关领域：电子电信更多>>
相关作者：张兴何进高越更多>>
相关机构：北京大学南昌大学辽宁大学更多>>
相关期刊：《Protection and Control of Modern Power Systems》《Communications in Theoretical Physics》《Chinese Journal of Polymer Science》《Chinese Physics B》更多>>
相关基金：国家自然科学基金中国博士后科学基金国家重点基础研究发展计划更多>>
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Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes
《Chinese Physics B》2023年第8期404-408,共5页张涛 李若晗 苏凯 苏华科 吕跃广 许晟瑞 张进成 郝跃 
Project supported by the National Natural Science Foundation of China(Grant No.62104185);the Fundamental Research Funds for the Central Universities,China(Grant No.JB211103);the National Natural Science Foundation for Distinguished Young Scholars,China(Grant No.61925404);the Wuhu and Xidian University Special Fund for Industry–University-Research Cooperation,China(Grant No.XWYCXY-012021010)。
Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky inte...
关键词：AlGaN/GaN SBDs GaN passivation layer proton irradiation dynamic on-resistance 
Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer被引量：1
《Chinese Physics B》2014年第3期625-629,共5页伍伟 张波 罗小蓉 方健 李肇基 
Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China(Grant No.2010ZX02201);the National Natural Science Foundation of China(Grant No.61176069);the National Defense Pre-Research of China(Grant No.51308020304)
A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift...
关键词：multiple-direction assisted depletion effect breakdown voltage （BV） electric field modulation lateral double-diffusion MOSFET （LDMOS） 
A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS
《Chinese Physics B》2013年第6期542-548,共7页周坤 罗小蓉 范远航 罗尹春 胡夏融 张波 
supported by the National Natural Science Foundation of China (Grant No. 61176069);the State Key Laboratory Science Fund of Electronic Thin Films and Integrated Devices of China (Grant No. CXJJ201004);the National Key Laboratory Science Fund of Analog Integrated Circuit,China (Grant No. 9140C090304110C0905)
A novel low specific on-resistance （Ron,sp） silicon-on-insulator （SO1） p-channel lateral double-diffused metal-oxide semiconductor （pLDMOS） compatible with high voltage （HV） n-channel LDMOS （nLDMOS） is propo...
关键词：SILICON-ON-INSULATOR p-channel LDMOS p-buried layer breakdown voltage 
A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration被引量：2
《Chinese Physics B》2012年第6期560-564,共5页罗小蓉 姚国亮 张正元 蒋永恒 周坤 王沛 王元刚 雷天飞 张云轩 魏杰 
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 609 76060);the National Key Laboratory of Analogue Integrated Circuit (Grant No. 9140C090304110C0905)
A low on-resistance （Ron,sp） integrable silicon-on-insulator （SOI） n-channel lateral double-diffused metal-oxide-semiconductor （LDMOS） is proposed and its mechanism is investigated by simulation. The LDMOS has t...
关键词：SOI electric field breakdown voltage trench gate specific on-resistance 
Ultra-low on-resistance high voltage (>600V) SOI MOSFET with a reduced cell pitch
《Chinese Physics B》2011年第2期555-560,共6页罗小蓉 姚国亮 陈曦 王琦 葛瑞 Florin Udrea 
supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060);the Science Fund of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904);the Innovation Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. CXJJ201004)
A low specific on-resistance （RS,on） silicon-on-insulator （SOI） trench MOSFET （nmtal-oxide-semiconductor-field- effect-transistor） with a reduced cell pitch is proposed. The lateral MOSFET features multiple tren...
关键词：SILICON-ON-INSULATOR electric field breakdown voltage trench gate TRENCH 
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