PBTI

作品数：16被引量：3H指数：1
导出分析报告
相关领域：电子电信更多>>
相关作者：易茂祥丁力邵川缪永李扬更多>>
相关机构：合肥工业大学中国科学院大学江苏商贸职业学院湖北科技学院更多>>
相关期刊：《北京大学学报（自然科学版）》《Chinese Physics B》《Journal of Advanced Dielectrics》《仪器仪表学报》更多>>
相关基金：国家自然科学基金中国人民解放军总装备部预研基金国家教育部博士点基金国家重点基础研究发展计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Chinese Physics Bx
共 条 记 录，以下是1-5
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices
《Chinese Physics B》2022年第1期529-534,共6页Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai Hua-Xiang Yin Wen-Wu Wang 
the Science and Technology Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z201100004220001);the National Major Project of Science and Technology of China(Grant No.2017ZX02315001);the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(Grant Nos.Y9YS05X002 and E0YS01X001).
A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking fro...
关键词：bias temperature instability(BTI) channel length stress FINFET 
PBTI stress-induced 1/f noise in n-channel FinFET
《Chinese Physics B》2020年第12期536-541,共6页Dan-Yang Chen Jin-Shun Bi Kai Xi Gang Wang 
Project supported by the National Natural Science Foundation of China(Grant No.61634008).
The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 n...
关键词：PBTI 1/f noise FINFET mobility fluctuation 
Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric
《Chinese Physics B》2020年第3期340-345,共6页Tao-Tao Que Ya-Wen Zhao Liu-An Li Liang He Qiu-Ling Qiu Zhen-Xing Liu Jin-Wei Zhang Jia Chen Zhi-Sheng Wu Yang Liu 
Project supported by the National Key Research and Development Program,China(Grant No.2017YFB0402800);the Key Research and Development Program of Guangdong Province,China(Grant No.2019B010128002);the National Natural Science Foundation of China(Grant No.U1601210);the Natural Science Foundation of Guangdong Province,China(Grant No.2015A030312011)。
The effect of high overdrive voltage on the positive bias temperature instability(PBTI)trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT)with LPCVD-Si...
关键词：gallium nitride LPCVD-SiNx MIS-HEMTs overdrive voltage TRAPPING BEHAVIOR 
Influence of ultra-thin TiN thickness(1.4 nm and 2.4 nm) on positive bias temperature instability(PBTI)of high-k/metal gate nMOSFETs with gate-last process
《Chinese Physics B》2015年第12期499-502,共4页祁路伟 杨红 任尚清 徐烨峰 罗维春 徐昊 王艳蓉 唐波 王文武 闫江 朱慧珑 赵超 陈大鹏 叶甜春 
Project supported by the National High Technology Research and Development Program of China(Grant No.SS2015AA010601);the National Natural Science Foundation of China(Grant Nos.61176091 and 61306129)
The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy di...
关键词：positive bias temperature instability（PBTI） HK/MG Ea trap energy distribution 
Degradation characteristics and mechanism of PMOSFETs under NBT-PBT-NBT stress
《Chinese Physics B》2007年第5期1445-1449,共5页刘红侠 李忠贺 郝跃 
Project supported by the National Natural Science Foundation of China （Grant No 60206006）, the Program for New Century Excellent Talents of Ministry of Education of China （Grant No 681231366）, the National Defense Pre-Research Foundation of China （Grant No 51308040103） and the Key Project of Chinese Ministry of Education （Grant No 104172）.
Degradation characteristics of PMOSFETs under negative bias temperature-positive bias temperature-negative bias temperature （NBT-PBT-NBT） stress conditions are investigated in this paper. It is found that for all de...
关键词：ultra deep submicron PMOSFETs negative bias temperature instability （NBTI） positive bias temperature instability （PBTI） interface traps 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部