HALL-EFFECT

作品数：7被引量：14H指数：2
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相关领域：电子电信更多>>
相关期刊：《Materials Sciences and Applications》《Chinese Physics B》《Microsystems & Nanoengineering》《Plasma Science and Technology》更多>>
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Inverted pyramid 3-axis silicon Hall-effect magnetic sensor with offset cancellation
《Microsystems & Nanoengineering》2025年第1期321-333,共13页Jacopo Ruggeri Udo Ausserlechner Helmut Köck Karen M.Dowling 
Microelectronic magnetic sensors are essential in diverse applications,including automotive,industrial,and consumer electronics.Hall-effect devices hold the largest share of the magnetic sensor market,and they are par...
关键词：inverted pyramid axis Hall effect mems micromachining inverted pyramid structurerealized etching pyramid openings magnetic sensor microelectronic magnetic sensors cmos processingthe 
Magnet Formation by the Surface Modification of Diamond with Manganese Detected by the Magnetic Flux Density on the Surface被引量：1
《Materials Sciences and Applications》2017年第8期642-648,共7页Takahisa Yamazaki Ryusei Ninomiya 
A surface modification of diamond with manganese powder was attempted to make a magnetic functional surface for handling diamond. Manganese carbide, Mn7C3, was formed on diamond (110) by near-infrared radiation heatin...
关键词：MANGANESE DIAMOND CARBIDE Magnet HALL-EFFECT Sensor 
Theoretical analysis of transcranial Hall-effect stimulation based on passive cable model被引量：8
《Chinese Physics B》2015年第12期373-378,共6页袁毅 李小俚 
Project supported by the National Natural Science Foundation of China(Grant Nos.61273063 and 61503321);the China Postdoctoral Science Foundation(Grant No.2013M540215);the Natural Science Foundation of Hebei Province,China(Grant No.F2014203161);the Youth Research Program of Yanshan University,China(Grant No.02000134)
Transcranial Hall-effect stimulation（THS） is a new stimulation method in which an ultrasonic wave in a static magnetic field generates an electric field in an area of interest such as in the brain to modulate neuron...
关键词：HALL-EFFECT STIMULATION passive cable model neurons 
Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire被引量：3
《Science China(Physics,Mechanics & Astronomy)》2010年第1期49-53,共5页DING GuoJian , GUO LiWei, XING ZhiGang, CHEN Yao, XU PeiQiang, JIA HaiQiang, ZHOU JunMing & CHEN Hong Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 
Supported by the National Natural Science Foundation of China (Grant No.10574148);the National High-Tech Research and Development Program of China (Grant Nos. 2006AA03A106 and 2006AA03A107);the National Basic Research Program of China (Grant No. 2006CB921300)
Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD...
关键词：ALGAN HALL-EFFECT LUMINESCENCE 
Correlation Method of Average Plasma Velocity Measurement in Hall-Effect Thrusters
《Plasma Science and Technology》2009年第6期709-713,共5页宁中喜 李鸿 于达仁 
supported by National Natural Science Foundation of China(No.50676026)
A new method to measure the average plasma velocity in a Hall-effect thruster is presented. The method is brought forward in virtue of the characteristics of low frequency oscillation induced by the propellant ionizat...
关键词：Hall-effect thruster average plasma velocity correlation method 
Effect of the Hollow Cathode Heat Power on the Performance of an Hall-Effect Thruster被引量：2
《Plasma Science and Technology》2009年第2期194-199,共6页宁中喜 于达仁 李鸿 闫国军 
supported by National Natural Science Foundation of China (No. 50676026)
Effect of the hollow cathode heat power on the performance of a Hall-effect thruster is investigated. The variations in the Hall-effect thruster＇s performance （thrust, specific impulse and anode efficiency） with th...
关键词：hollow cathode Hall thruster plasma bridge 
Carrier transport and luminescence properties of n-type GaN
《Science China(Physics,Mechanics & Astronomy)》2008年第8期1046-1052,共7页ZHANG Zeng ZHANG Rong XIE ZiLi LIU Bin XIU XiangQian JIANG RuoLian HAN Ping GU ShuLin SHI Yi ZHENG YouDou 
the National Basic Research Program of China (Grant No. 2006CB6049);the National Hi-Tech Research and Development Program of China (Grant No. 2006AA03A142);the National Natural Science Foundation of China (Grant Nos. 60721063, 60731160628 and 60676057);the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) ;the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2005210)
The surface morphology,electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH4 doped GaN films were grown by metal organic chemical vapor deposition with the electro...
关键词：N-TYPE GAN MORPHOLOGY HALL-EFFECT LUMINESCENCE 
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