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RESPONSIVITY: 作品数：92被引量：110H指数：5; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：葛惟昆徐晓锋沈大可韩高荣更多>>; 相关机构：中央司法警官学院香港科技大学浙江大学清华大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划北京市自然科学基金中国博士后科学基金更多>>

Mobile blue-light communication over a signal optical path using a time-division multiplexing scheme: 《Journal of Semiconductors》2025年第3期82-88,共7页Pengzhan Liu Linning Wang Jiayao Zhou Xinijie Mo Yingze Liang Jiahao Gou Ziqian Qi Ziping Cao Yongjin Wang; jointly supported by the National Natural Science Foundation of China (U21A20495);Natural Science Foundation of Jiangsu Province (BG2024023);National Key Research and Development Program of China (2022YFE0112000);111 Project (D17018)。; Multiple quantum well(MQW) Ⅲ-nitride diodes that can simultaneously emit and detect light feature an overlapping region between their electroluminescence and responsivity spectra, which allows them to be simultaneous...; 关键词：multiple quantum well diodes electroluminescence and responsivity spectra overlap mobile light communication system time-division multiplexing scheme

A peak enhancement of frequency response of waveguide integrated silicon-based germanium avalanche photodetector: 《Journal of Semiconductors》2024年第7期61-68,共8页Linkai Yi Daoqun Liu Wenzheng Cheng Daimo Li Guoqi Zhou Peng Zhang Bo Tang Bin Li Wenwu Wang Yan Yang Zhihua Li; Avalanche photodetectors(APDs) featuring an avalanche multiplication region are vital for reaching high sensitivity and responsivity in optical transceivers. Waveguide-coupled Ge-on-Si separate absorption, charge, and...; 关键词：PHOTODETECTORS optical communications RESPONSIVITY 3-dB bandwidth

The measurement of responsivity of infrared photodetectors using a cavity blackbody: 《Journal of Semiconductors》2023年第10期62-68,共7页Nong Li Dongwei Jiang Guowei Wang Weiqiang Chen Wenguang Zhou Junkai Jiang Faran Chang Hongyue Hao Donghai Wu Yingqiang Xu Guiying Shen Hui Xie Jingming Liu Youwen Zhao Fenghua Wang Zhichuan Niu; This work was supported by the National Key Technologies R&D Program of China(No.2019YFA0705203,2019YFA070104);the National Natural Science Foundation of China(No.62004189);the State Key Laboratory of Special Rare Metal Materials,Northwest Rare Metal Materials Research Institute(No.SKL2023K00X).; For the measurement of responsivity of an infrared photodetector,the most-used radiation source is a blackbody.In such a measurement system,distance between the blackbody,the photodetector and the aperture diameter ar...; 关键词：infrared photodetectors responsivity calibration cavity blackbody

Organic bulk heterojunction enabled with nanocapsules of hydrate vanadium pentaoxide layer for high responsivity self-powered photodetector: 《Journal of Semiconductors》2022年第9期39-45,共7页Hemraj Dahiya Anupam Agrawal Ganesh D.Sharma Abhishek Kumar Singh; DST,New Delhi for INSPIRE Fellowship(IF190560).; This article demonstrates the fabrication of organic-based devices using a low-cost solution-processable technique.A blended heterojunction of chlorine substituted 2D-conjugated polymer PBDB-T-2Cl,and PC71BM supported...; 关键词：self-powered detector green light sensor HVO PBDB-T-2Cl detector processable solution sensor

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors: 《Journal of Semiconductors》2017年第12期56-61,共6页Guifeng Chen Mengxue Wang Wenxian Yang Ming Tan Yuanyuan Wu Pan Dai Yuyang Huang Shulong Lu; Project supported by the Key R&D Program of Jiangsu Province(No.BE2016085);the National Natural Science Foundation of China(Nos.61674051);the External Cooperation Program of BIC,Chinese Academy of Sciences(No.121E32KYSB20160071); Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnac...; 关键词：Zn diffusion SEMI-CLOSED InGaAs/InP PIN photodetectors photoluminescence （PL） dark current RESPONSIVITY

High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits被引量：1: 《Journal of Semiconductors》2016年第11期54-59,共6页尹冬冬何婷婷韩勤吕倩倩张冶金杨晓红; Project supported by the High-Tech Research and Development Program of China(Nos.2015AA016904,2015AA012302);the National Basic Research Program of China(Nos.2012CB933503,2013CB932904);the National Natural Foundation of China(Nos.61274069,61176053,61021003,61435002); This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bond...; 关键词：integrated photodetectors BONDING silicon on insulator evanescent wave

Improved two-dimensional responsivity physical model of a CMOS UV and blue-extended photodiode被引量：1: 《Journal of Semiconductors》2014年第9期76-82,共7页陈长平田满芳江震宇金湘亮罗均; Project supported by the State Key Program of the National Natural Science Foundation of China(No.61233010);the National Natural Science Foundation of China(No.61274043);the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-11-0975); A CMOS UV and blue-extended photodiode is presented and fabricated for light detection in the ultraviolet/blue spectral range. An octagon homocentric ring-shaped geometry is used to improve the ultraviolet responsivit...; 关键词：UV/blue-extended photodiode responsivity physical model dead layer effect CMOS process

A low power discrete operation mode for punchthrough phototransistor: 《Journal of Semiconductors》2013年第7期102-105,共4页周泉郭树旭宋静怡李兆涵杜国同常玉春; Project supported by the National Natural Science Foundation of China(Nos.61076046,61274023);the New Century Excellent Talents Support Program of the Ministry of Education;the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(No.ZHD201204); This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation...; 关键词：punchthrough （PT） phototransistor discrete operation mode low power high responsivity

A different approach for determining the responsivity of n^+p detectors using scanning electron microscopy: 《Journal of Semiconductors》2012年第7期29-33,共5页Omeime Xerviar Esebamen Gran Thungstrm Hans-Erik Nilsson; This paper explores an alternative to the standard method of studying the responsivities （the input-output gain） and other behaviours of detectors at low electron energy. The research does not aim to compare the res...; 关键词：scanning electron microscopy RESPONSIVITY n＋p detector

Fabrication and characterization of an AlGaN/PZT detector被引量：1: 《Journal of Semiconductors》2010年第12期87-89,共3页张燕孙璟兰王妮丽韩莉刘向阳李向阳孟祥建; Project supported by the National Natural Science Foundation of China(No.60807037); Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p- GaN/SiO2...; 关键词：A1GaN/PZT dual-band detector UV/IR RESPONSIVITY DETECTIVITY

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