SUPERJUNCTION

作品数：18被引量：21H指数：3
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相关领域：电子电信更多>>
相关作者：李肇基方健乔明黄淮吴郁更多>>
相关机构：电子科技大学北京工业大学更多>>
相关期刊：《物理学报》《Journal of Semiconductors》《The Journal of China Universities of Posts and Telecommunications》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家教育部博士点基金更多>>
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Superjunction nanoscale partially narrow mesa IGBT towards superior performance
《Chinese Physics B》2017年第3期582-587,共6页喻巧群 陆江 刘海南 罗家俊 李博 王立新 韩郑生 
Project supported by the National Natural Science Foundation of China(Grant No.61404161)
We present a detailed study of a superjunction （S J） nanoscale partially narrow mesa （PNM） insulated gate bipolar transistor （IGBT） structure. This structure is created by combining the nanoscale PNM structure a...
关键词：insulated gate bipolar transistor （IGBT） partially narrow mesa （PNM） superjunction （S J） turn-offloss 
A novel high performance TFS SJ IGBT with a buried oxide layer被引量：2
《Chinese Physics B》2014年第8期625-630,共6页张金平 李泽宏 张波 李肇基 
Project supported by the National Science and Technology Major Project,China(Grant No.2011ZX02504-003);the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2011J024);the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201301)
A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base ...
关键词：insulated gate bipolar transistor trench field stop SUPERJUNCTION buried oxide layer 
A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching被引量：1
《Chinese Physics B》2012年第4期612-618,共7页任敏 李泽宏 邓光敏 张灵霞 张蒙 刘小龙 谢加雄 张波 
supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005);the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2010J038);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110185120005)
The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor （MOSFET） under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island ...
关键词：avalanche current path unclamped inductive switching SUPERJUNCTION MOSFET 
Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery被引量：4
《Chinese Physics B》2012年第1期449-452,共4页Cao Lin Pu Hong-Bin Chen Zhi-Ming Zang Yuan 
Project supported by the National Natural Science Foundation of China(Grant No.60876050);the Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology,China
In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ struct...
关键词：4H-SIC semi-superjunction Schottky barrier diode softness factor 
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