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Partial-SOI high voltage laterally double-diffused MOS with a partially buried n^+-layer
《Chinese Physics B》2014年第6期468-472,共5页胡盛东 武星河 朱志 金晶晶 陈银晖 
supported by the Natural Science Foundation of Chongqing Science and Technology Commission(CQ CSTC)(Grant No.cstcjjA40008);the Fundamental Research Funds for the Central Universities,China(Grant No.CDJZR12160003);the China Postdoctoral Science Foundation(Grant Nos.2012M511906 and 2013T60835);Chongqing University Postgraduates’Science and Innovation Fund,China(Grant No.CDJXS12161105)
A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is a...
关键词：SILICON-ON-INSULATOR breakdown voltage interface charges electric field 
Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer被引量：1
《Chinese Physics B》2014年第3期625-629,共5页伍伟 张波 罗小蓉 方健 李肇基 
Project supported by the National Science and Technology Project of the Ministry of Science and Technology of China(Grant No.2010ZX02201);the National Natural Science Foundation of China(Grant No.61176069);the National Defense Pre-Research of China(Grant No.51308020304)
A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift...
关键词：multiple-direction assisted depletion effect breakdown voltage （BV） electric field modulation lateral double-diffusion MOSFET （LDMOS） 
A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS
《Chinese Physics B》2013年第6期542-548,共7页周坤 罗小蓉 范远航 罗尹春 胡夏融 张波 
supported by the National Natural Science Foundation of China (Grant No. 61176069);the State Key Laboratory Science Fund of Electronic Thin Films and Integrated Devices of China (Grant No. CXJJ201004);the National Key Laboratory Science Fund of Analog Integrated Circuit,China (Grant No. 9140C090304110C0905)
A novel low specific on-resistance （Ron,sp） silicon-on-insulator （SO1） p-channel lateral double-diffused metal-oxide semiconductor （pLDMOS） compatible with high voltage （HV） n-channel LDMOS （nLDMOS） is propo...
关键词：SILICON-ON-INSULATOR p-channel LDMOS p-buried layer breakdown voltage 
Novel high-voltage power lateral MOSFET with adaptive buried electrodes
《Chinese Physics B》2012年第7期444-449,共6页章文通 吴丽娟 乔明 罗小蓉 张波 李肇基 
Project supported by the National Natural Science Foundation of China (Grant No. 60906038);the Science Technology Foundation for Young Scientist of University of Electronic Science and Technology of China (Grant No. L08010301JX0830)
A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET...
关键词：adaptive buried electrode interface charge breakdown voltage enhanced dielectric layer field 
A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer被引量：4
《Chinese Physics B》2012年第6期573-578,共6页张金平 李泽宏 张波 李肇基 
Project supported by the National Science and Technology Major Project of China （Grant No. 2011ZX02504-003） and the Fundamental Research Funds for the Central Universities, China （Grant No. ZYGX2011J024）.
A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electr...
关键词：carrier stored trench bipolar transistor light punch-through buried p-layer breakdown voltage 
Schottky barrier MOSFET structure with silicide source/drain on buried metal
《Chinese Physics B》2007年第1期240-244,共5页李定宇 孙雷 张盛东 王漪 刘晓彦 韩汝琦 
Project supported by the National Natural Science Foundation of China （Grant No 60506009）.
In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal （SSDOM）. The source/drain region consists of two layers of silicide materials. ...
关键词：Schottky barrier MOSFET Schottky barrier barrier height silicide source/drain 
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