HETEROEPITAXY

作品数：39被引量：36H指数：3
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相关机构：中国科学院更多>>
相关期刊：《Science China(Physics,Mechanics & Astronomy)》《Science China(Technological Sciences)》《Science China Mathematics》《Frontiers of Materials Science》更多>>
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Step-edge-guided nucleation and growth mode transition of α-Ga_(2)O_(3) heteroepitaxy on vicinal sapphire
《Chinese Physics B》2024年第8期397-403,共7页郝景刚 张彦芳 张贻俊 徐科 韩根全 叶建东 
Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3605403);the National Natural Science Foundation of China (Grant Nos.62234007,62241407,62293521,62304238,62241407,U21A20503,and U21A2071);the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2020B010174002);the Cultivation Project for Youth Teachers in Jiangsu Province;Jiangsu Funding Program for Excellent Postdoctoral Talent。
Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by ...
关键词：growth mode miscut angle crystalline quality surface morphology 
High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film
《Chinese Physics B》2023年第9期559-565,共7页王必成 汤梓荧 郑湖颖 王立胜 王亚琪 王润晨 丘志仁 朱海 
the National Natural Science Foundation of China(Grant Nos.U22A2073,11974433,91833301,and 11974122)。
We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the...
关键词：deep ultraviolet FILM PHOTODETECTOR HETEROEPITAXY 
Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance被引量：2
《Chinese Physics B》2019年第6期105-109,共5页Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61604049);the Shenzhen Municipal Research Project(Grant No.JCYJ20160531192714636)
Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire...
关键词：GAN HETEROEPITAXY thermal CONDUCTIVITY TRANSIENT THERMOREFLECTANCE ULTRAVIOLET laser 
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy被引量：2
《Chinese Physics B》2011年第9期439-444,共6页杜彦浩 吴洁君 罗伟科 John Goldsmith 韩彤 陶岳彬 杨志坚 于彤军 张国义 
Project supported by the National Basic Research Program of China (Grant No.2007CB307004);the National High Technology Research and Development Program of China (Grant No.2009AA03A198);the National Natural Science Foundation of China (Grant Nos.60776041 61076012,60876063,and 60676032);the Science and Technology Fund of Beijing,China (Grant No.Z101103050410003)
Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, pho...
关键词：GAN hydride vapour phase epitaxy HETEROEPITAXY 
SiC based Si/SiC heterojunction and its rectifying characteristics被引量：2
《Chinese Physics B》2009年第11期4966-4969,共4页朱峰 陈治明 李连碧 赵顺峰 林涛 
Project supported by the National Natural Science Foundation of China (Grant No 60576044)
The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play t...
关键词：Si/6H-SiC HETEROJUNCTION heteroepitaxy SiC 
Simulation of multilayer Cu/Pd（100） heteroepitaxial growth by pulse laser deposition
《Chinese Physics B》2007年第10期3029-3035,共7页吴锋民 陆杭军 方允樟 黄仕华 
Project supported by the State Key Development Program for Basic Research of China （Grant No 2006CB708612） and Natural Science Foundation for Young Scientists of Zhejiang Province, China （Grant No RC02069）.Acknowledgment We would like to thank Dr Ling-wang Wang of the Computational Research Division at the Lawrence Berkeley National Lab and Dr Xiangrong Ye of Department of Material Science and Chemical Engineering, University of California at San Diego for helpful discussion.
The heteroepitaxial growth of multilayer Cu/Pd（100） thin film via pulse laser deposition （PLD） at room temperature is simulated by using kinetic Monte Carlo （KMC） method with realistic physical parameters. The e...
关键词：HETEROEPITAXY pulse laser deposition Ehrlich-Schwoebel （ES） barrier kinetic Monte Carlo simulation 
Photoluminescence characteristics of GaN：Si
《Chinese Physics B》2005年第10期2133-2136,共4页冯倩 龚欣 张晓菊 郝跃 
Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration st...
关键词：GaN：Si HETEROEPITAXY HALL PHOTOLUMINESCENCE 
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