HETEROEPITAXY

作品数：39被引量：36H指数：3
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相关作者：孙殿照赵万顺王雷曾一平孙国胜更多>>
相关机构：中国科学院更多>>
相关期刊：《Science China(Physics,Mechanics & Astronomy)》《Science China(Technological Sciences)》《Science China Mathematics》《Frontiers of Materials Science》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划北京市自然科学基金更多>>
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Growth and characterization ofβ-Ga_(2)O_(3)thin films grown on off-angled Al_(2)O_(3)substrates by metal-organic chemical vapor deposition被引量：4
《Journal of Semiconductors》2022年第9期68-73,共6页Yabao Zhang Jun Zheng Peipei Ma Xueyi Zheng Zhi Liu Yuhua Zuo Chuanbo Li Buwen Cheng 
the National Key Research and Development Program of China(Grant No.2018YFB2200500);the National Natural Science Foundation(Grant Nos.62050073,62090054,61975196).
Beta-gallium oxide(β-Ga_(2)O_(3))thin films were deposited on c-plane(0001)sapphire substrates with different mis-cut angles along<>by metal-organic chemical vapor deposition(MOCVD).The structural properties and surf...
关键词：β-Ga_(2)O_(3) HETEROEPITAXY mis-cut Al_(2)O_(3)substrates MOCVD 
Heteroepitaxy of semiconductor thin films
《Journal of Semiconductors》2019年第6期4-5,共2页Yi Gu 
The heteroepitaxy of semiconductor thin films is a cornerstone of semiconductor devices and is naturally preferred to grow on matched substrates from the view point of material epitaxy. However, the heteroepitaxy is a...
关键词：HETEROEPITAXY SEMICONDUCTOR DEVICES MATERIAL EPITAXY 
Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System被引量：1
《Journal of Semiconductors》2002年第8期800-804,共5页孙国胜 王雷 罗木昌 赵万顺 孙殿照 曾一平 李晋闽 林兰英 
国家基础研究专项基金 ( No.G2 0 0 0 0 6 83);国家高技术研究与发展基金 ( No.2 0 0 1AA3110 90 )资助项目~~
Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements a...
关键词：CVD/LPCVD HETEROEPITAXY 3C-SIC 
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