ULTRA-THIN

作品数：188被引量：321H指数：8
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Simplified Compact Perovskite Solar Cells with Efficiency of 19.6% via Interface Engineering
《Energy & Environmental Materials》2020年第1期5-11,共7页Dedi Li Changwen Liu Shi Chen Weiguang Kong Haichao Zhang Deng Wang Yan Li Jianhui Chang Chun Cheng 
supported by the Guangdong High-level Personnel of Special Support Program-Outstanding young scholar in science and technology innovation(Grant No.2015TQ01C543);the National Key Research and Development Project funding from the Ministry of Science and Technology of China(Grants Nos.2016YFA0202400 and 2016YFA0202404);the Peacock Team Project funding from Shenzhen Science and Technology Innovation Committee(Grant No.KQTD2015033110182370);the National Natural Science Foundation of China(Grant No.51776094);the Guangdong Natural Science Funds for Distinguished Young Scholars(Grant No.2015A030306044);the Guangdong-Hong Kong joint innovation project(Grant No.2016A050503012)
For the commercialization of perovskite solar cells(PSCs), it is more appealing to develop high-performance simplified PSCs where perovskite films are just sandwiched between the back and front electrodes, in order to...
关键词：charge transport layers compact perovskite solar cells interface engineering monolayer-modified electrodes ULTRA-THIN 
Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors被引量：1
《Chinese Physics Letters》2017年第4期87-91,共5页Shi-Li Yan Zhi-Jian Xie Jian-Hao Chen Takashi Taniguchi Kenji Watanabe 
Supported by the National Basic Research Program of China under Grant Nos 2013CB921900 and 2014CB920900;the National Natural Science Foundation of China under Grant No 11374021)(S.Yan,Z.Xie,J.-H,Chen);support from the Elemental Strategy Initiative conducted by the MEXT,Japan;a Grant-in-Aid for Scientific Research on Innovative Areas"Science of Atomic Layers"from JSPS
The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is o...
关键词：Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors FET BP 
Fabrication of superconducting NbN meander nanowires by nano-imprint lithography被引量：1
《Chinese Physics B》2016年第1期384-389,共6页杨美 刘丽华 宁鲁慧 金贻荣 邓辉 李洁 李阳 郑东宁 
supported by the National Basic Research Program of China(Grant Nos.2011CBA00106 and 2009CB929102);the National Natural Science Foundation of China(Grant Nos.11104333 and 10974243)
Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepa...
关键词：nano-imprint lithography meander nanowires ultra-thin NbN films 
Fabrication and properties of the meander nanowires based on ultra-thin Nb films
《Chinese Physics B》2014年第8期521-526,共6页赵璐 金贻荣 李洁 邓辉 郑东宁 
Project supported by the National Basic Research Program of China(973 Program)(Grant Nos.2011CBA00106 and 2009CB929102);the National Natural Science Foundation of China(Grant Nos.11104333 and 10974243)
We report the fabrication and the study of superconducting properties of ultra-thin Nb superconducting meander nanowires, which can be used as superconducting nanowire single-photon detectors （SNSPDs）. The ultra-th...
关键词：Nb meander nanowire critical temperature critical field critical current 
Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters
《Chinese Physics B》2013年第4期482-485,共4页杨薇 武翌阳 刘宁炀 刘磊 陈钊 胡晓东 
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51272008, and 51102003);the National Basic Research Program of China (Grant No. 2012CB619304);the Beijing Municipal Science & Technology Commission (Grant No. D111100001711002);the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014)
We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet （374 nm） to green （536 nm） with InN...
关键词：InN ultra-thin layer spontaneous emission spectra GAIN laser diodes 
Operating characteristic analysis on the ultra-thin low temperature floor-heating system被引量：1
《Frontiers of Structural and Civil Engineering》2013年第2期127-132,共6页Hualing ZHANG Xiaopeng SONG 
This work was supported by the National Basic Research Program of China(Grant No.2011CB710701).
Prefabricated ultra-thin radiant heating panel,as a new heating terminal type,is becoming a highlight in Yangtze River Valley area,China recently.However,there is a lack of operating characteristic research in this re...
关键词：ultra-thin floor heating panel the preheating time thermal comfort energy saving 
GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition被引量：6
《Chinese Physics Letters》2007年第8期2419-2422,共4页岳远征 郝跃 冯倩 张进城 马晓华 倪金玉 
We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of ...
Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT
《Journal of Semiconductors》2005年第8期1495-1499,共5页齐海涛 张世林 郭维廉 梁惠来 毛陆虹 
国家重点基础研究发展计划资助项目(批准号:2002CB311905)~~
A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is ...
关键词：HBT ultra-thin base device simulation voltage-controlled NDR PVCR 
Ultra-Thin Body SOI MOSFET交流特性分析和结构优化
《Journal of Semiconductors》2005年第1期120-125,共6页田豫 黄如 
国家自然科学基金 (批准号 :90 2 0 70 0 4);国家重点基础研究发展规划 (批准号 :2 0 0 0 0 3 65 0 1)资助项目~~
针对沟道长度为 5 0nm的UTBSOI器件进行了交流模拟工作 ,利用器件主要的性能参数 ,详细分析了UTB结构的交流特性 .通过分析UTBSOI器件的硅膜厚度、侧墙宽度等结构参数对器件交流特性的影响 ,对器件结构进行了优化 .最终针对UTBSOIMOSFE...
关键词：UTB MOSFET 交流特性 模拟 
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