ETCH

作品数：54被引量：55H指数：4
导出分析报告
相关领域：电子电信更多>>
相关作者：范学丽章志兴徐斌刘钧松丁娟更多>>
相关机构：上海富乐德智能科技发展有限公司北京京东方光电科技有限公司深圳市华星光电技术有限公司上海华力集成电路制造有限公司更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划上海市青年科技启明星计划国家高技术研究发展计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Plasma Science and Technologyx
共 条 记 录，以下是1-5
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
Plasma density measurement and downstream etching of silicon and silicon oxide in Ar/NF3 mixture remote plasma source被引量：2
《Plasma Science and Technology》2019年第6期52-57,共6页H J YEOM D H CHOI Y S LEE J H KIM D J SEONG S J YOU H C LEE 
In this study,plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/NF3 gas mixtures using a microwave cutoff probe.The measured plasma density is in the range of 101...
关键词：REMOTE plasma source electron density CUTOFF probe DOWNSTREAM ETCH 
Correlation ofⅢ/Ⅴsemiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance
《Plasma Science and Technology》2017年第12期96-110,共15页Gerhard FRANZ Ralf MEYER Markus-Christian AMANN 
the support of Deutsche Forschungsgemeinschaft,DFG#FR 1553/6-1
Reactive ion etching is the interaction of reactive plasmas with surfaces. To obtain a detailed understanding of this process, significant properties of reactive composite low-pressure plasmas driven by electron cyclo...
关键词：electron cyclotron resonance high-density plasma Langmuir probe EEDF radial plasma density radial uniformity 
Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films
《Plasma Science and Technology》2012年第10期915-918,共4页郑艳彬 李光 王文龙 李秀昌 姜志刚 
Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects ...
关键词：IGZO TFT dry etch plasma 
Electron Density and Optical Emission Measurements of SF_6/O_2 Plasmas for Silicon Etch Processes被引量：2
《Plasma Science and Technology》2012年第4期316-320,共5页M.M.MORSHED S.M.DANIELS 
supported by the EC Framework 7 IMPROVE research project (IR -2008-0013);the Science Foundation Ireland PRECISION project (08-SRC-I1411)
This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6...
关键词：OES hairpin probe SF6 O2 electron density atomic fluorine 
Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl_2/BCl_3-Based Inductively Coupled Plasma被引量：5
《Plasma Science and Technology》2011年第2期223-229,共7页D.S.RAWAL B.K.SEHGAL R.MURALIDHARAN H.K.MALIK 
A study of Cl2/BCl3-based inductively coupled plasma （ICP） was conducted using thick photoresist mask for anisotropic etching of 50μm diameter holes in a GaAs wafer at a relatively high average etching rate for etc...
关键词：GAAS inductively coupled plasma ETCHING ion energy etch yield 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部