ETCH

作品数：54被引量：55H指数：4
导出分析报告
相关领域：电子电信更多>>
相关作者：范学丽章志兴徐斌刘钧松丁娟更多>>
相关机构：上海富乐德智能科技发展有限公司北京京东方光电科技有限公司深圳市华星光电技术有限公司上海华力集成电路制造有限公司更多>>
相关期刊：更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划上海市青年科技启明星计划国家高技术研究发展计划更多>>
-
在结果中检索

检索结果分析

结果分析中...
选择条件：
  • 期刊=Journal of Semiconductorsx
共 条 记 录，以下是1-7
全选清除导出
参考文献引证文献引用追踪
视图：
排序：
The investigation of DARC etch back in DRAM capacitor oxide mask opening被引量：1
《Journal of Semiconductors》2021年第7期88-92,共5页Jianqiu Hou Zengwen Hu Kuowen Lai Yule Sun Bo Shao Chunyang Wang Xinran Liu Karson Liu 
Opening the silicon oxide mask of a capacitor in dynamic random access memory is a critical process on a capacitive coupled plasma(CCP)etch tool.Three steps,dielectric anti-reflective coating(DARC)etch back,silicon ox...
关键词：dynamic random access memory(DRAM) oxide mask open of capacitor capacitive coupled plasma(CCP)etch dielectric anti-reflective coating(DARC) etch back(EB) 
Contact etch process optimization for RF process wafer edge yield improvement
《Journal of Semiconductors》2019年第12期97-100,共4页Zhangli Liu Bingkui He Fei Meng Qiang Bao Yuhong Sun Shaojun Sun Guangwei Zhou Xiuliang Cao Haiwei Xin 
supported by Shanghai Rising-Star Program (B type) (No. 18QB1401900)
Radio-frequency(RF)process products suffer from a wafer edge low yield issue,which is induced by contact opening.A failure mechanism has been proposed that is based on the characteristics of a wafer edge film stack.Th...
关键词：bottom anti-reflect coating break through wafer edge PLANARIZATION 
A photoluminescence study of plasma reactive ion etching-induced damage in GaN
《Journal of Semiconductors》2014年第11期16-19,共4页Z.Mouffak A.Bensaoula L.Trombetta 
GaN films with reactive ion etching （RIE） induced damage were analyzed using photoluminescence （PL）. We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with pre...
关键词：GAN etch damage PHOTOLUMINESCENCE reactive ion etching 
Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask
《Journal of Semiconductors》2010年第11期127-130,共4页李永亮 徐秋霞 
Project supported by the Special Funds for Major State Basic Research Project of China(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon（a-Si） hardmask is presented.SCI（NH4OH：H2O2：H2O）,which can achieve reasonable etch rates for me...
关键词：TAN wet etching metal gate high k dielectric hardmask integration 
TaN wet etch for application in dual-metal-gate integration technology
《Journal of Semiconductors》2009年第12期133-136,共4页李永亮 徐秋霞 
supported by the Special Funds for Major State Basic Research Projects(No.2006CB302704);the National Natural Science Foundation of China(No.60776030)
Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/H...
关键词：TAN wet etching metal gate high k dielectric integration 
Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions被引量：3
《Journal of Semiconductors》2009年第8期47-51,共5页陈晓锋 陈诺夫 吴金良 张秀兰 柴春林 俞育德 
supported by the Space Agency of China and the Chinese Academy of Sciences
A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemic...
关键词：chemical etching etch pit defect growth striations CONVECTION 
Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates
《Journal of Semiconductors》2009年第6期138-141,共4页疏珍 万景 陆冰睿 谢申奇 陈宜方 屈新萍 刘冉 
supported by the National High Technology Research and Development Program of China(No.2006AA03Z352);the Science and Technology Commission of Shanghai (No. 08QH14002);the Seed Funding for Key Project by Ministry of Education;the '985'Micro/Nanoelectronics Science and Technology Innovation Platform
We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography（EBL） and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the...
关键词：SiNx templates NANOIMPRINT NEB-22 electron bean lithography reactive ion etch 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部