To indirectly investigate the dislocation behavior of Fe-36wt%Ni Invar alloy by the etch pit method, polished Invar specimens were etched by a solution containing 4 g copper sulfate, 20 mL hydrochloric acid, and 20 mL...
Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800);the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121);the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...
The precipitates on austenite grain boundaries in an Nb-V-Ti microalloyed steel have been investigated by transmission electron microscope (TEM) examination of carbon extraction replica. The replica was prepared fro...
This work was supported by the National Natural Science Foundation of China(No.60171008);Shanghai Science and Technology Committee(No.0214nm005,No.0452nm087).
A simple preparation of ultrathin nanoporous gold film was described. Copper and gold were used to fabricate Cu-Au alloy films through vacuum deposition. The formation of nanoporous gold films from the alloy films inv...