云南高校图书馆联盟文献共享服务平台- SNAPBACK

SNAPBACK: 作品数：24被引量：35H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：郝跃陈万军张波马晓华朱志炜更多>>; 相关机构：电子科技大学西安电子科技大学中国电子科技集团第五十八研究所江南大学更多>>; 相关期刊：《Chinese Journal of Electronics》《Journal of Civil Engineering and Architecture》《Research》《物理学报》更多>>; 相关基金：国家自然科学基金北京市自然科学基金重庆市自然科学基金中国博士后科学基金更多>>

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure: 《Journal of Semiconductors》2020年第10期50-55,共6页Chenxia Wang Jie Wei Diao Fan Yang Yang Xiaorong Luo; supported by Postdoctoral Innovative Talent Support Program under Grant BX20190059;the China Postdoctoral Science Foundation under Grant 2019M660235;the Sichuan Science and Technology Program under Project 2018JY0555;the Science and Technology on Analog Integrated Circuit Laboratory under Project 6142802180509。; A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side...; 关键词：snapback-free fast switching SOI LIGBT trench gate E_(off)

Insight into multiple-triggering effect in DTSCRs for ESD protection被引量：2: 《Journal of Semiconductors》2017年第7期93-96,共4页Lizhong Zhang Yuan Wang Yize Wang Yandong He; supported by the Beijing Natural Science Foundation,China(No.4162030); The diode-triggered silicon-controlled rectifier（DTSCR） is widely used for electrostatic discharge（ESD） protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigge...; 关键词：electrostatic discharge（ESD） diode-triggered silicon-controlled rectifier（DTSCR） double snapback transmission line pulse（TLP） test

A novel double trench reverse conducting IGBT with robust freewheeling switch: 《Journal of Semiconductors》2014年第8期79-83,共5页朱利恒陈星弼; Project supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities(No.E022050205); The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode ...; 关键词：reverse conducting insulated gate bipolar transistor SNAPBACK current concentration

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor: 《Journal of Semiconductors》2014年第7期48-51,共4页朱利恒陈星弼; supported by the National Natural Science Foundation of China(No.51237001);the Fundamental Research Funds for the Central Universities of China(No.E022050205); Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort...; 关键词：reverse conducting IGBT snapback flee turn-off energy reverse-recovery charge

Theoretical calculation of the p-emitter length for snapback-free reverse-conducting IGBT被引量：2: 《Journal of Semiconductors》2014年第6期62-66,共5页朱利恒陈星弼; Project supported by the Fundamental Research Funds for the Central Universities(No.E022050205);the National Natural Science Foundation of China(No.51237001); A physically based equation for predicting required p-emitter length of a snapback-free reverse- conducting insulated gate bipolar transistor （RC-IGBT） with field-stop structure is proposed. The n-buffer resis- tanc...; 关键词：reverse conducting insulated gate bipolar transistor voltage snapback

A new short-anoded IGBT with high emission efficiency被引量：2: 《Journal of Semiconductors》2012年第11期48-51,共4页陈伟中张波李泽宏任敏李肇基; supported by the National Natural Science Foundation of China(Nos.60806025,61076082); A novel short-anoded insulated-gate bipolar transistor（SA-IGBT） with double emitters is proposed.At the on-state,the new structure shows extraordinarily high emission efficiency.Moreover,with a short-contacted anode...; 关键词：short-anode insulated-gate bipolar transistor snapback turn-off tradeoff

ESD robustness studies on the double snapback characteristics of an LDMOS with an embedded SCR被引量：3: 《Journal of Semiconductors》2011年第9期34-37,共4页蒋苓利张波樊航乔明李肇基; Project supported by the Analog Devices Inc and the National Natural Science Foundation of China(No.60906038); Criterion for the second snapback of an LDMOS with an embedded SCR is given based on parasitic parameter analysis.According to this criterion,three typical structures are compared by numerical simulation and structura...; 关键词：ESD LDMOS SCR double snapback

Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm silicide CMOS technology被引量：4: 《Journal of Semiconductors》2009年第8期82-89,共8页姜玉稀李娇冉峰曹家麟杨殿雄; supported by the National Natural Science Foundation of China(Nos.60773081,60777018);the AM Foundation by Science and Technology Commission of Shanghai Municipality(No.087009741000);the SDC Project by Science and Technology Commission of Shanghai Municipality(Nos.08706201800,077062008,08706201000); Gate-grounded NMOS （GGNMOS） devices with different device dimensions and layout floorplans have been designed and fabricated in 0.13-μm silicide CMOS technology. The snapback characteristics of these GGN-MOS device...; 关键词：electrostatic discharge gate-grounded NMOS snapback characteristic layout parameters

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology被引量：1: 《Journal of Semiconductors》2008年第11期2164-2168,共5页朱科翰于宗光董树荣韩雁; the Natural Science Foundation of Jiangsu Province(No.BK2007026);the Natural Science Foundation of Zhejiang Province(No.Y107055)~~; A novel SCR on-chip ESD device is proposed to protect IC chips against ESD stressing in two opposite direc- tions. The triggering voltages of four types of dual direction SCRs （DDSCR） are compared and analyzed, pMOS...; 关键词：electrostatic discharge dual direction SCR SNAPBACK

Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure被引量：1: 《Journal of Semiconductors》2008年第3期461-466,共6页王永顺李海蓉吴蓉李思渊; The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to th...; 关键词：power static induction thyristor reverse snapback electron-hole plasma LIFETIME injection level

SNAPBACK