SPIN-TRANSFER

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相关领域:电子电信更多>>
相关期刊:《Journal of Semiconductors》《Chinese Physics B》《Science China(Information Sciences)》更多>>
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Method of simulating hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink
《Chinese Physics B》2023年第7期591-597,共7页冀敏慧 张欣苗 潘孟春 杜青法 胡悦国 胡佳飞 邱伟成 彭俊平 林珠 李裴森 
Project supported by the National Natural Science Foundation of China(Grant No.62004223);the Science and Technology Innovation Program of Hunan Province,China(Grant No.2022RC1094);the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China(Grant No.KF202012);the Hunan Provincial Science Innovation Project for Postgraduate,China(Grant No.CX20210086).
The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MT...
关键词:magnetic tunneling junction(MTJ)model spin-transfer-torque(STT) circuit simulation MATLAB/SIMULINK 
Implementation of 16 Boolean logic operations based on one basic cell of spin-transfer-torque magnetic random access memory
《Science China(Information Sciences)》2023年第6期246-253,共8页Yan HUANG Kaihua CAO Kun ZHANG Jinkai WANG Kewen SHI Zuolei HAO Wenlong CAI Ao DU Jialiang YIN Qing YANG Junfeng LI Jianfeng GAO Chao ZHAO Weisheng ZHAO 
supported by National Natural Science Foundation of China (Grant No.51901008);International Mobility Project (Grant No.B16001);National Key Technology Program of China (Grant No.2017ZX01032101);National Key R&D Program of China (Grant No.2018YFB0407602);National Natural Science Foundation of China (Grant No.92164206);International Collaboration Project (Grant No.B16001);VR Innovation Platform from Qingdao Science and Technology Commission;Magnetic Sensor Innovation Platform from Laoshan District。
In-memory computing(IMC)systems based on emerging nonvolatile memories(NVMs)provide a thorough solution for memory wall issues and von Neumann bottlenecks.Massive IMC schemes have been proposed by utilizing ingenious ...
关键词:memory computing logic operation magnetic tunnel junctions TRANSISTOR spin transfer torque 
Spin torque nano-oscillators with a perpendicular spin polarizer
《Chinese Physics B》2019年第3期60-70,共11页Cuixiu Zheng Hao-Hsau Chen Xiangli Zhang Zongzhi Zhang Yaowen Liu 
supported by the National Basic Research Program of China(Grant No.2015CB921501);the National Natural Science Foundation of China(Grant Nos.11774260,51671057,and 11874120)
We present an overview in the understanding of spin-transfer torque(STT) induced magnetization dynamics in spintorque nano-oscillator(STNO) devices. The STNO contains an in-plane(IP) magnetized free layer and an out-o...
关键词:SPIN TORQUE nano-oscillators(STNOs) SPIN-TRANSFER TORQUE effect magnetic simulation 
Voltage assisted control of spin-transfer nano-oscillators
《Journal of Semiconductors》2015年第3期65-68,共4页Bahniman Ghosh Gaurav Solanki 
The spin-transfer nano-oscillator (STNO) has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through ...
关键词:spin-transfer nano-oscillator voltage controlled magnetic anisotropy tunnelling magnetoresistance 
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