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SCALING: 作品数：634被引量：804H指数：11; 导出分析报告; 相关领域：理学更多>>; 相关作者：程昆朋张元良陈慧刘卫国胡云卿更多>>; 相关机构：天津大学中国科学院大学中国科学院同济大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors: 《Journal of Semiconductors》2024年第10期1-2,共2页Youla Yang Daixuan Wu He Tian Tian-Ling Ren; In recent years,there has been a significant increase in research focused on the growth of large-area single crystals.Rajan et al.[1]recently achieved the growth of large-area monolayers of transition-metal chalcogeni...; 关键词：silver EPITAXIAL dimensional

Ballistic 2D MoS_(2)transistors with ultra-high on-state currents: 《Science China Materials》2024年第10期3083-3086,共4页Ying Li Zongmeng Yang Qiuhui Li Jichao Dong Jing Lu; supported by the National Key R&D Program of China(2022YFA1203904);the National Natural Science Foundation of China(12274002,11804140,and 91964101);the High-Performance Computing Platform of Peking University。; According to the International Roadmap for Devices and Systems(IRDS),the physical scaling limit for the gate length of bulk silicon field-effect transistors(FETs)is 12 nm(Lg=12 nm)with a 42-nm gate pitch[1].Further mi...; 关键词：SCATTERING SCALING STATE

大面积芯片MEMS-IC集成工艺中wafer Scaling问题的初步解决及探讨: 《电子元器件与信息技术》2024年第5期4-7,共4页顾佳烨; 本文描述了在集成电路-微机电(IC-MEMS)集成产品的研发制造过程中,光刻对准步骤出现的一个严重影响晶圆工艺加工可行性的问题--晶圆涨缩误差(wafer scaling error)。wafer scaling error在IC半导体工艺中是无法避免的现象,其数值通常在1...; 关键词：集成电路-微机电 wafer scaling error 晶圆翘曲应力补偿

Chirp Compensation for Generating Ultrashort Attosecond Pulses with 800-nm Few-Cycle Pulses: 《Chinese Physics Letters》2023年第11期42-46,共5页王力王小伟肖凡王家灿陶文凯张栋文赵增秀; supported by the National Key Research and Development Program of China(Grant No.2019YFA0307703);the National Natural Science Foundation of China(Grant Nos.12234020 and 11974426)。; We show that it is feasible to generate sub-40-attosecond pulses with near-infrared few-cycle pulses centered at 800 nm.With proper gating technique,super-broadband continuum spectrum extending from 50 eV to above 200...; 关键词：satis HARMONIC SCALING

FinFETs based on layered 2D semiconductors: 《Science China Materials》2023年第9期3759-3760,共2页Theresia Knobloch Tibor Grasser; Over the past decades, the continued scaling of transistor dimensions, as dictated by Moore’s Law, has reduced energy consumption and increased the computational power of integrated circuits. At gate lengths below 12...; 关键词：SCALING TRANSISTOR LAYERED

Accuracy Evaluation of Marginalized Unscented Kalman Filter: 《Space(Science & Technology)》2023年第1期597-605,共9页Han Yan Hanyu Liu Xiucong Sun Ming Xu; supported in part by the National Natural Science Foundation of China under Grant U21B6001 and in part by the Beijing Nova Program under Grant Z201100006820102.; Compared with a conventional unscented Kalman filter(UKF),the recently proposed marginalized unscented Kalman filter(MUKF)uses a partially sampling strategy to achieve similar filter accuracy with fewer sigma points,d...; 关键词：FILTERING EQUATION SCALING

Data Hiding in the Division Domain:Simultaneously Achieving Robustness to Scaling and Additive Attacks: 《国际计算机前沿大会会议论文集》2022年第2期47-58,共12页Shu Yu Junren Qin Jiarui Deng Shanxiang Lyu Fagang Li; supported in part by the National Natural Science Foundation of China (61902149,61932010 and 62032009);the Natural Science Foundation of Guangdong Province (2020A1515010393).; Data hiding plays an important role in privacy protection and authentication,but most data hiding methods fail to achieve satisfactory performance in resisting scaling attacks and additive attacks.To this end,this pap...; 关键词：Data hiding Robust watermarking Quantization index modulation(QIM)

An Energy-Efficient 12b 2.56 MS/s SAR ADC Using Successive Scaling of Reference Voltages: 《Computers, Materials & Continua》2022年第7期2127-2139,共13页Hojin Kang Syed Asmat Ali Shah HyungWon Kim; supported by Institute of Information&communications Technology Planning&Evaluation(IITP)grant funded by the Korea government(MSIT)(No.2020-0-01304,Development of Self-learnable Mobile Recursive Neural Network Processor Technology);also supported by the MSIT(Ministry of Science and ICT),Korea,under the Grand Information Technology Research Center support program(IITP-2020-0-01462);supervised by the IITP(Institute for Information&communications Technology Planning&Evaluation)”;And also financially supported by the Ministry of Small and Medium-sized Enterprises(SMEs)and Startups(MSS),Korea,under the“Regional Specialized Industry Development Plus Program(R&D,S3091644)”;supervised by the Korea Institute for Advancement of Technology(KIAT);supported by the AURI(Korea Association of University,Research institute and Industry)grant funded by the Korea Government(MSS:Ministry of SMEs and Startups).(No.S2929950,HRD program for 2020).; This paper presents an energy efficient architecture for successive approximation register(SAR)analog to digital converter(ADC).SAR ADCs with a capacitor array structure have been widely used because of its simple arc...; 关键词：Low voltage low power successive approximation register analog to digital converter switching energy

Laser scaling for generation of megatesla magnetic fields by microtube implosions被引量：1: 《High Power Laser Science and Engineering》2021年第4期103-111,共9页D.Shokov M.Murakami J.J.Honrubia; supported by the Japan Society for the Promotion of Science(JSPS)。; Microtube implosions are a novel scheme to generate ultrahigh magnetic fields of the megatesla order.These implosions are driven by ultraintense and ultrashort laser pulses.Using two-and three-dimensional particle sim...; 关键词：microtube implosion megatesla magnetic field ultraintense laser

Carbon nanotube-based CMOS transistors and integrated circuits: 《Science China(Information Sciences)》2021年第10期132-147,共16页Yunong XIE Zhiyong ZHANG; supported by National Key Research&Development Program(Grant No.2016YFA0201901);Beijing Municipal Science and Technology Commission(Grant No.Z181100004418011)。; Over the last sixty years,the scaling of silicon-based complementary metal-oxide-semiconductor(CMOS)field-effect transistors(FETs)have promoted the rapid development of microelectronic technology.However,the developme...; 关键词：carbon nanotube TRANSISTOR integrated circuit SCALING nanoelectronics

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