SI-GAAS

作品数：50被引量：23H指数：3
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相关机构：中国科学院河北工业大学北京师范大学西安理工大学更多>>
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Relation between EL2 Groupand EL6 Group in SI-GaAs
《Rare Metals》1996年第3期191-195,共5页吴凤美 赵周英 
The annealing behavior for EL2 and EL6 groups as dominant deep levels in semi-insulating GaAs was presented using Photo Induced Transient Spectroscopy measurement (PITS). During rapid thermal annealing, a relation was...
关键词：ANNEALING Crystal defects Electron energy levels Silicon on insulator technology SPECTROMETRY 
Raman　Study　of　Defects　in　SI－GaAs　and　Se－doped　Epitaxial　Layer　Irradiated　by　10　MeV　Electrons
《Rare Metals》1996年第1期12-15,共4页吴凤美 立海峰 陈武鸣 程光煦 杭德生 
Raman scattering measurements on Se-doped GaAs epitaxial layers and semi-insulating (SI) GaAs irradi-ated by 10 Mev electrons have been investigated. Several defect-related features were observed. We suggestthat the 2...
关键词：Undoped SI-GaAs Se-doped epitaxial layer Raman technique 10 Mev electron-irradiation 
Investigation　of　EL2　Defect　in　10　MeV　Electron　Irradiated　Undoped　Semi－insulating　LEC　GaAs
《Rare Metals》1995年第4期249-252,共4页吴凤美 施毅 陈武鸣 吴红卫 赖启基 赵周英 
The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The resul...
关键词：Undoped SI-GaAs EL2 OTCS technique 10 MeV electron irra-diation 
Spatial Distribution of EL2 Defect in Semi-insulating GaAs
《Rare Metals》1994年第4期296-298,共3页汝琼娜 李光平 何秀坤 
It has advantages of accuracy, rapidity and non-destruction that EL2 distribution in semi-insulating LECGaAs crystal has been measured by near infrared absorption method with a high spatial resolution. Now EL2defect e...
关键词：EL2defect SI-GAAS Infrared absorption 
Correlation between the Concentrations of 　Ionized EL2 and Carbon Acceptor in Undoped Semi－insulating LEC GaAs
《Rare Metals》1994年第2期113-117,共5页杨瑞霞 李光平 
Undoped semi-insulating (SI) LEC GaAs samples were investigated. The concentrations of ionized EL2and carbon acceptor were measured by multiple wavelength infrared absorption and local vibrational modeinfrared absorpt...
关键词：Infrared absorption EL2 Carbon acceptor SI-GAAS 
Determination of Substitutional Carbon in SI-GaAs Thin Wafers by Infrared Microscope
《Rare Metals》1993年第4期284-287,共4页何秀坤 王琴 汝琼娜 李光平 
Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscope at room temperature for the first time. The experimental results showed that the carbon concentration in GaAs thin waf...
关键词：CARBON Composition CRYSTALS Infrared instruments MICROSCOPES 
Rapid Thermal Annealing of Si^+-implanted SI-GaAs with Co-implantation of P^+
《Rare Metals》1990年第2期135-138,共4页He, Qian  Chen, Tangsheng  Luo, Jinsheng 
Rapid thermal annealing (RTA) of Si+-implanted SI-GaAs was studied in an annealing system using a halogen lamp heater. Good electrical properties in the activated layers were achieved. The co-implantation of phosphoru...
关键词：Electric Properties Hall Effect Heat Treatment ANNEALING Semiconductor Devices 
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