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SPIN-ORBIT: 作品数：142被引量：92H指数：5; 导出分析报告; 相关领域：理学更多>>; 相关作者：孔超王恩亮张卫钱冬高春雷更多>>; 相关机构：中国科学院华中科技大学东南大学中国科学技术大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划北京市自然科学基金中国博士后科学基金更多>>

Electrically switchable helicity of light driven by the spin-orbit torque effect: 《Journal of Semiconductors》2024年第11期10-12,共3页Yongping Wei Yaping Wu; The revolution in information sharing is fundamentally supported by the highly efficient processing,storage,and transmission of data[1].For the latter,energy consumption continuously increases with the rapid developme...; 关键词：EFFECT latter LIGHT

Spin-orbit torque effect in silicon-based sputtered Mn_(3)Sn film: 《Chinese Physics B》2024年第10期394-399,共6页Sha Lu Dequan Meng Adnan Khan Ziao Wang Shiwei Chen Shiheng Liang; supported by the National Key Research and Development Program of China(Grant No.2022YFE0103300);the National Natural Science Foundation of China(Grant No.12274119);the Natural Science Foundation of Hubei Province(Grant No.2022CFA088);the Open Research Fund of Songshan Lake Materials Laboratory(Grant No.2022SLABFN04).; Noncollinear antiferromagnet Mn_(3)Sn has shown remarkable efficiency in charge-spin conversion,a novel magnetic spin Hall effect,and a stable topological antiferromagnetic state,which has resulted in great interest f...; 关键词：SPINTRONICS noncollinear antiferromagnetism spin-orbit torque

XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface: 《Rare Metals》2024年第8期3868-3875,共8页Yan-Ru Li Mei-Yin Yang Guo-Qiang Yu Bao-Shan Cui Jin-Biao Liu Yong-Liang Li Qi-Ming Shao Jun Luo; financially supported by the Chinese Academy of Sciences (Nos.XDA18000000 and Y201926);the Youth Innovation Promotion Association of CAS (No.2020118);Beijing Municipal Natural Science Foundation (No.4244071);the Funding Support from Research Grants Council—Early Career Scheme (No.26200520)。; Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential f...; 关键词：Filed-free magnetic switching Spin-orbit torque XOR logic gate Lateral interface

Influence of exchange bias on spin torque ferromagnetic resonance for quantification of spin–orbit torque efficiency: 《Chinese Physics B》2024年第5期688-694,共7页赵乾张腾飞何斌李子木张森富于国强王建波刘青芳魏晋武; Project supported by the National Key Research and Development Program of China(Grant No.2021YFB3601300);the National Natural Science Foundation of China(Grant Nos.52201290,12074158,and 12174166);the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2022-kb01)。; Antiferromagnet(AFM)/ferromagnet(FM)heterostructure is a popular system for studying the spin–orbit torque(SOT)of AFMs.However,the interfacial exchange bias field induces that the magnetization in FM layer is noncoll...; 关键词：ANTIFERROMAGNETS spin-orbit torque exchange bias spin torque ferromagnetic resonance

Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure被引量：1: 《Chinese Physics B》2024年第4期662-667,共6页陈建辉梁梦凡宋衍袁俊杰张梦旸骆泳铭王宁宁; Project supported by the National Natural Science Foundation of China (Grant No.12274108);the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008);the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。; Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/...; 关键词：spin-orbit torque field-free switching HfO_(2) buffer layer

Two-dimensional magnetic materials for spintronic applications被引量：1: 《Nano Research》2024年第2期743-762,共20页Shivam N.Kajale Jad Hanna Kyuho Jang Deblina Sarkar; Spintronic devices are driving new paradigms of bio-inspired,energy efficient computation like neuromorphic stochastic computing and in-memory computing.They have also emerged as key candidates for non-volatile memori...; 关键词：SPINTRONICS van der Waals magnetic tunnel junction(MTJ) spin-orbit torque MAGNETISM

Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO: 《Science China(Information Sciences)》2024年第1期312-313,共2页Shiyang LU Xiaobai NING Hongchao ZHANG Sixi ZHEN Xiaofei FAN Danrong XIONG Dapeng ZHU Gefei WANG Hong-Xi LIU Kaihua CAO Weisheng ZHAO; supported by National Key Research and Development Program of China (Grant Nos.2022YFB4400200,2021YFB3601303,2021YFB3601304,2021YFB3601300);National Natural Science Foundation of China (Grant Nos.62001014,92164206)。; Spin-orbital torque (SOT) based three-terminal magnetic tunnel junctions (MTJs) have attracted much interest as the next generation magnetic random-access memory (MRAM)key device both in the academy and the industry.T...; 关键词：TORQUE interface WRITE

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications: 《Journal of Semiconductors》2023年第12期81-88,共8页Chuanpeng Jiang Jinhao Li Hongchao Zhang Shiyang Lu Pengbin Li Chao Wang Zhongkui Zhang Zhengyi Hou Xu Liu Jiagao Feng He Zhang Hui Jin Gefei Wang Hongxi Liu Kaihua Cao Zhaohao Wang Weisheng Zhao; supported by the National Key Research and Development Program of China (Nos.2021YFB3601303,2021YFB3601304,2021YFB3601300,2022YFB4400200,2022YFB4400201,2022YFB4400203);the National Natural Science Foundation of China (Grant No.62171013)。; We have successfully demonstrated a 1 Kb spin-orbit torque(SOT)magnetic random-access memory(MRAM)multiplexer(MUX)array with remarkable performance.The 1 Kb MUX array exhibits an in-die function yield of over 99.6%.Ad...; 关键词：spin-orbit torque MRAM multiplexer array 200 mm-wafer platform stability reliability

利用轨道转移力矩实现室温范德华磁存储被引量：1: 《Science Bulletin》2023年第22期2743-2749,M0005,共8页潘振存李栋叶兴国陈正陈朝晖王安琦田明亮姚光杰刘开辉廖志敏; supported by the National Natural Science Foundation of China (61825401 and 91964201);the Innovation Program for Quantum Science and Technology (2021ZD0302403)。; 具有非易失性的磁阻式随机存取存储器(MRAM)促进了诸如存内计算、神经形态计算和随机计算等在内的新兴应用.二维范德华异质结具有原子级平滑的界面和高度可调的物理性质,为MRAM的发展提供了新的技术路线.本文报道了基于WTe_2/Fe_(3)GaTe...; 关键词：Magnetoresistive memory Orbit-transfer torque Spin-orbit torque Magnetization switching Magnetic tunnel junction 2D magnetic materials

Stochastic spin-orbit-torque device as the STDP synapse for spiking neural networks被引量：1: 《Science China(Physics,Mechanics & Astronomy)》2023年第5期188-194,共7页Haotian Li Liyuan Li Kaiyuan Zhou Chunjie Yan Zhenyu Gao Zishuang Li Ronghua Liu; supported by the National Natural Science Foundation of China(Grant No.12074178);the Open Research Fund of Jiangsu Provincial Key Laboratory for Nanotechnology.; Neuromorphic hardware,as a non-Von Neumann architecture,has better energy efficiency and parallelism than the conventional computer.Here,with the numerical modeling spin-orbit torque(SOT)device using current-induced S...; 关键词：spin-orbit torque neuromorphic hardware spiking neural network stochastic magnetization reversal

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