云南高校图书馆联盟文献共享服务平台- ULTRAVIOLET

ULTRAVIOLET: 作品数：668被引量：962H指数：12; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：谢小平王丽萍李佳翰汤义男顾谦群更多>>; 相关机构：中国科学院明志科技大学台湾大学浙江大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金天津市自然科学基金更多>>

Ultraviolet metalens and metalens array of focused vortex beams: 《Chinese Physics B》2023年第6期270-276,共7页张金平王焱袁欢王泽豪邓阳黄承志吴加贵杨俊波; Project supported by the National Natural Science Foundation of China(Grant Nos.60907003,61805278,61875168,and 22134005);Chongqing Science Funds for Distinguished Young Scientists(Grant No.cstc2021jcyj-jqX0027);Innovation Research 2035 Pilot Plan of Southwest University(Grant No.SWU-XDPY22012);China Postdoctoral Science Foundation(Grant No.2018M633704);Innovation Support Program for Overseas Students in Chongqing(Grant No.cx2021008);Foundation of NUDT(Grant Nos.JC13-02-13 and ZK17-0301);Hunan Provincial Natural Science Foundation of China(Grant No.13JJ3001);Program for New Century Excellent Talents in University(Grant No.NCET-12-0142);Chongqing Talents Program for Outstanding Scientists(Grant No.cstc2021ycjh-bgzxm0178)。; The solar-blind ultraviolet(UV)wavelength is particularly interesting within the range of 200 nm–300 nm.Here,we propose a focusing metalens,focusing vortex beam(VB)metalens and metalens array that specifically work i...; 关键词：metalens METAMATERIALS ultraviolet(UV) vortex beams

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga_(2)O_(3)photoconductor with high photo response被引量：2: 《Chinese Physics B》2022年第8期700-704,共5页Zeng Liu Yu-Song Zhi Mao-Lin Zhang Li-Li Yang Shan Li Zu-Yong Yan Shao-Hui Zhang Dao-You Guo Pei-Gang Li Yu-Feng Guo Wei-Hua Tang; Project supported by the National Natural Science Foundation of China(Grant No.61774019);Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant Nos.XK1060921115 and XK1060921002)。; A 4×4 beta-phase gallium oxide(β-Ga_(2)O_(3))deep-ultraviolet(DUV)rectangular 10-fingers interdigital metalsemiconductor-metal(MSM)photodetector array of high photo responsivity is introduced.The Ga2O_(3)thin film i...; 关键词：Ga_(2)O_(3) array photodetector MOCVD deep UV detection

Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes: 《Chinese Physics B》2022年第6期678-682,共5页Ying-Zhe Wang Mao-Sen Wang Ning Hua Kai Chen Zhi-Min He Xue-Feng Zheng Pei-Xian Li Xiao-Hua Ma Li-Xin Guo Yue Hao; supported by the National Natural Science Foundation of China(Grant Nos.62104180,61974115,11690042,61634005,61974111,12035019,and 61904142);the Fundamental Research Funds for the Central Universities(Grant No.XJS221106);the Key Research and Development Program of Shaanxi,China(Grant No.2020ZDLGY03-05)。; The degradation mechanism of GaN-based near-ultraviolet(NUV,320-400 nm)light emitting diodes(LEDs)with low-indium content under electrical stress is studied from the aspect of defects.A decrease in the optical power a...; 关键词：light emitting diodes GaN electrical stress DEFECT

Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector: 《Chinese Physics B》2021年第8期475-479,共5页Hongyu Ma Kewei Liu Zhen Cheng Zhiyao Zheng Yinzhe Liu Peixuan Zhang Xing Chen Deming Liu Lei Liu Dezhen Shen; Project supported by the National Natural Science Foundation of China(Grant Nos.62074148,61875194,11727902,12074372,11774341,11974344,61975204,and 11804335);the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020225);the Open Project of the State Key Laboratory of Luminescence and Applications(Grant Nos.SKLA-2020-02 and SKLA-2020-06).; The slower response speed is the main problem in the application of ZnO quantum dots(QDs)photodetector,which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorpti...; 关键词：ZNO quantum dots ultraviolet photodetector oxygen vacancy

Dual-wavelength ultraviolet photodetector based on vertical(Al,Ga)N nanowires and graphene被引量：1: 《Chinese Physics B》2021年第7期641-645,共5页Min Zhou Yukun Zhao Lifeng Bian Jianya Zhang Wenxian Yang Yuanyuan Wu Zhiwei Xing Min Jiang Shulong Lu; the National Key Research and Development Program of China(Grant No.2018YFB0406602);Natural Science Foundation of Jiangsu Province,China(Grant No.BK20180252);Key Research Program of Frontier Sciences,CAS(Grant No.ZDBS-LY-JSC034);the National Natural Science Foundation of China(Grant Nos.61804163,61875224,and 61827823);the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018005);Natural Science Foundation of Jiangxi Province,China(Grant No.20192BBEL50033);Research Program of Scientific Instrument,Equipment of CAS(Grant No.YJKYYQ20200073);SINANO(Grant Nos.Y8AAQ21001 and Y4JAQ21001);Vacuum Interconnected Nanotech Workstation(Grant Nos.Nano-X and B2006)。; Due to the wide application of UV-A(320 nm–400 nm)and UV-C(200 nm–280 nm)photodetectors,dual-wavelength(UV-A/UV-C)photodetectors are promising for future markets.A dual-wavelength UV photodetector based on vertical(...; 关键词：dual-wavelength ultraviolet photodetector (Al Ga)N nanowire GRAPHENE molecular beam epitaxy

A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity: 《Chinese Physics B》2020年第12期542-546,共5页Jinhui Gao Yehao Li Yuxuan Hu Zhitong Wang Anqi Hu Xia Guo; Project supported by the Research Innovation Fund for College Students of Beijing University of Posts and Telecommunications(Grant No.202002046);the National Natural Science Foundation of China(Grant No.61804012).; A graphene/AlGaN deep-ultraviolet(UV)photodetector is presented with ultrahigh responsivity of 3.4×105 A/W at 261 nm incident wavelength and 149 pW light power.A gain mechanism based on electron trapping at the poten...; 关键词：graphene/AlGaN deep-ultraviolet high responsivity PHOTODETECTOR

High-performance frequency stabilization of ultraviolet diode lasers by using dichroic atomic vapor spectroscopy and transfer cavity被引量：1: 《Chinese Physics B》2020年第7期356-362,共7页Danna Shen Liangyu Ding Qiuxin Zhang Chenhao Zhu Yuxin Wang Wei Zhang Xiang Zhang; Project supported by the National Natural Science Foundation of China(Grant Nos.11704408 and 91836106);the Beijing Natural Science Foundation,China(Grant No.Z180013);the Joint Fund of the Ministry of Education,China(Grant No.6141A020333xx).; We develop a high-performance ultraviolet(UV)frequency stabilization technique implemented directly on UV diode lasers by combining the dichroic atomic vapor laser lock and the resonant transfer cavity lock.As an exam...; 关键词：frequency stabilization ultraviolet diode laser dichroic atomic vapor spectroscopy transfer cavity

Ultraviolet irradiation dosimeter based on persistent photoconductivity effect of ZnO: 《Chinese Physics B》2020年第5期561-566,共6页王朝骏杨珣臧金浩陈彦成林超男刘忠侠单崇新; Project supported by the National Natural Science Foundation of China(Grant Nos.61804136,U1604263,and U1804155);China Postdoctoral Science Foundation(Grant Nos.2018M630829 and 2019T120630).; It is essential to determine the accumulative ultraviolet(UV)irradiation over a period of time in some cases,such as monitoring UV irradiation to the skin,solar disinfection of water,photoresist exposure,etc.UV colori...; 关键词：DOSIMETRY persistent photoconductivity photodetectors ultraviolet

Effects of deposition temperature on optical properties of MgF2 over-coated Al mirrors in the VUV被引量：1: 《Chinese Physics B》2019年第11期349-353,共5页Chun Guo Bin-Cheng Li Ming-Dong Kong Da-Wei Lin; Project supported by the West Light Foundation of the Chinese Academy of Sciences;the National Natural Science Foundation of China(Grant No.61805247); Both long-term environmental durability and high reflectance of protected-Al mirrors are of great importance for developing the optical instruments in the vacuum ultraviolet(VUV) applications. In this paper, the depen...; 关键词：protected-Al mirrors reflectance VACUUM ULTRAVIOLET MGF2

Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses: 《Chinese Physics B》2019年第9期381-384,共4页Xiaolong Cai Dong Zhou Liang Cheng Fangfang Ren Hong Zhong Rong Zhang Youdou Zheng Hai Lu; Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400902);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China; Four 4H-SiCp-i-n ultraviolet(UV) avalanche photodiode(APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses(0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed...; 关键词：4H-SIC AVALANCHE PHOTODIODE single photon detection efficiency TUNNELING

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