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A 128×128 SPAD LiDAR sensor with column-parallel 25 ps resolution TA-ADCs被引量：1: 《Journal of Semiconductors》2024年第8期34-40,共7页Na Tian Zhe Wang Kai Ma Xu Yang Nan Qi Jian Liu Nanjian Wu Runjiang Dou Liyuan Liu; supported by National Science and Technology Major Project(Grant No.2021ZD0109801);in part by the Beijing Municipal Science and Technology Project(Grant No.Z221100007722028);in part by the National Natural Science Foundation of China(Grant No.62334008).; This paper presents a design of single photon avalanche diode(SPAD)light detection and ranging(LiDAR)sensor with 128×128 pixels and 128 column-parallel time-to-analog-merged-analog-to-digital converts(TA-ADCs).Unlike...; 关键词：3D imaging CMOS imagers direct time-of-flight(dTOF) time-to-analog converter(TAC)

A review of automatic detection of epilepsy based on EEG signals: 《Journal of Semiconductors》2023年第12期8-30,共23页Qirui Ren Xiaofan Sun Xiangqu Fu Shuaidi Zhang Yiyang Yuan Hao Wu Xiaoran Li Xinghua Wang Feng Zhang; supported by the Strategic Priority Research Program of Chinese Academy of Sciences,Grant No.XDA0330000 and Grant No.XDB44000000。; Epilepsy is a common neurological disorder that occurs at all ages.Epilepsy not only brings physical pain to patients,but also brings a huge burden to the lives of patients and their families.At present,epilepsy detec...; 关键词：EPILEPSY ELECTROENCEPHALOGRAPHY automatic detection analog front end feature extraction CLASSIFIER

Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design: 《Journal of Semiconductors》2023年第11期89-100,共12页Devenderpal Singh Shalini Chaudhary Basudha Dewan Menka Yadav; This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack chan...; 关键词：short channel effects(SCEs) junctionless FinFET analog and RF parameters SIGE

Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems: 《Journal of Semiconductors》2023年第9期3-10,共8页Runxiao Shi Tengteng Lei Zhihe Xia Man Wong; supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691;Grant GHP/018/21SZ from the Innovation and Technology Fund;Grant SGDX20211123145404006 from the Science and Technology Program of Shenzhen;Fundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。; Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu...; 关键词：flexible electronics metal-oxide semiconductor thin-film transistor dual gate FLUORINATION analog front-end system sensors

Multiply accumulate operations in memristor crossbar arrays for analog computing被引量：3: 《Journal of Semiconductors》2021年第1期90-111,共22页Jia Chen Jiancong Li Yi Li Xiangshui Miao; the National Key Research and Development Plan of MOST of China(2019YFB2205100,2016YFA0203800);the National Natural Science Foundation of China(No.61874164,61841404,51732003,61674061);Hubei Engineering Research Center on Microelectronics.; Memristors are now becoming a prominent candidate to serve as the building blocks of non-von Neumann inmemory computing architectures.By mapping analog numerical matrices into memristor crossbar arrays,efficient multi...; 关键词：analog computing MEMRISTOR multiply accumulate(MAC)operation neural network numerical computing

Preface to the Special Issue on Advanced Analog and Mixed- Mode Integrated Circuits: 《Journal of Semiconductors》2020年第11期1-1,共1页Baoyong Chi Nan Sun Liyuan Liu Yan Lu; High performance analog and mixed signal circuits are strongly demanded in todays’system on chip systems.They found pervasive applications in A/D or D/A conversion,power management,radio frequency(RF)signal sensing a...; 关键词：INSIGHT TODAY MIXED

Challenges and opportunities toward fully automated analog layout design被引量：1: 《Journal of Semiconductors》2020年第11期71-80,共10页Hao Chen Mingjie Liu Xiyuan Tang Keren Zhu Nan Sun David Z.Pan; supported in part by the NSF under Grant No.1704758,and the DARPA IDEA program.; Realizing the layouts of analog/mixed-signal(AMS)integrated circuits(ICs)is a complicated task due to the high design flexibility and sensitive circuit performance.Compared with the advancements of digital IC layout a...; 关键词：VLSI integrated circuit ASIC EDA analog ic design physical design

Subthreshold analog techniques: 《Journal of Semiconductors》2019年第2期5-6,共2页Nanjian Wu; IEEE J.Solid-State Circuits,2019,doi:10.1109/JSSC.2018.2889847Low power is a fundamental requirement in state-ofthe-art IC designs,where lower and scalable supply voltagesare demanded due to the power benefits of digi...; 关键词：DSM SUBTHRESHOLD ANALOG TECHNIQUES OTA

Analysis and performance exploration of high performance(HfO_2) SOI FinFETs over the conventional(Si_3N_4) SOI FinFET towards analog/RF design: 《Journal of Semiconductors》2018年第12期68-74,共7页Neeraj Jain Balwinder Raj; Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET ...; 关键词：SOI FinFET SCEs intrinsic gain trans-conductance cut-off frequency

Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry: 《Journal of Semiconductors》2017年第7期64-70,共7页S.K.Vishvakarma Ankur Beohar Vikas Vijayvargiya Priyal Trivedi; supported by the Council of Scientific and Industrial Research(CSIR)Funded Research Project,Grant No.22/0651/14/EMR-II,Government of India; In this paper, analysis of DC and analog/RF performance on cylindrical gate-all-around tunnel fieldeffect transistor（TFET） has been made using distinct device geometry. Firstly, performance parameters of GAATFET are...; 关键词：tunnel field effect transistor cutoff frequency maximum oscillation frequency and gate all around

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