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Nanoscale Ⅲ-Ⅴ on Si-based junctionless tunnel transistor for EHF band applications
《Journal of Semiconductors》2017年第5期42-48,共7页Yogesh Goswami Pranav Asthana Bahniman Ghosh 
A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor（SG-JLTFET） has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped chann...
关键词：single gate junctionless tunnel field effect transistor （SG JL-TFET） gallium antimonide band-to-band tunnelling sub-threshold slope （SS） 
Vertical-dual-source tunnel FETs with steeper subthreshold swing
《Journal of Semiconductors》2016年第9期69-75,共7页蒋智 庄奕琪 李聪 王萍 刘予琪 
Project supported by the National Natural Science Foundation of China(Nos.61204092,61574109)
In order to improve the drive current and subthreshold swing（SS）, a novel vertical-dual-source tunneling field-effect transistor（VDSTFET） device is proposed in this paper. The influence of source height, channel l...
关键词：dual source regions and U-shape-gate tunneling field-effect transistor subthreshold swing band-toband tunneling on-state current 
Hetero-gate-dielectric double gate junctionless transistor(HGJLT)with reduced band-to-band tunnelling effects in subthreshold regime被引量：2
《Journal of Semiconductors》2014年第6期19-25,共7页Bahniman Ghosh Partha Mondal M.W.Akram Punyasloka Bal Akshay Kumar Salimath 
We propose a hetero-gate-dielectric double gate junctionless transistor （HGJLT）, taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects ＆band-to-band tunnelli...
关键词：hetero-gate-dielectric double gate junctionless transistor band-to-band tunnelling off-state 
GIDL current degradation in LDD nMOSFET under hot hole stress
《Journal of Semiconductors》2011年第11期43-46,共4页陈海峰 马晓华 过立新 杜慧敏 
supported by the Specialized Research Fund of the Education Department of Shaanxi Province,China(No.11JK0902);the Innovational Fund for Applied Materials of Xi'an,China(No.XA-AM-201012)
The degradation of gate-induced drain leakage （GIDL） current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter IDIFF. IDIFF is the difference of GIDL currents measured under two condit...
关键词：GIDL hot hole LDD band-to-band 
Novel p-Channel Selected n-Channel Divided Bit-Line NOR Flash Memory Using Source Induced Band-to-Band Hot Electron Injection Programming
《Journal of Semiconductors》2002年第10期1031-1036,共6页潘立阳 朱钧 刘楷 刘志宏 曾莹 
国家九五计划资助项目 (No.97 76 0 0 1 0 1)~~
A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced...
关键词：flash memory DINOR band-to-band SIBE disturbance 
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