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BUFFER_LAYER: 作品数：373被引量：330H指数：6; 导出分析报告; 相关作者：于军胜赵正平陈昊李亮蔡树军更多>>; 相关机构：电子科技大学清华大学河北半导体研究所中国科学院微电子研究所更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国家高技术研究发展计划更多>>

Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure被引量：1: 《Chinese Physics B》2024年第4期662-667,共6页陈建辉梁梦凡宋衍袁俊杰张梦旸骆泳铭王宁宁; Project supported by the National Natural Science Foundation of China (Grant No.12274108);the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008);the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。; Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/...; 关键词：spin-orbit torque field-free switching HfO_(2) buffer layer

A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications被引量：1: 《Chinese Physics B》2020年第12期475-482,共8页Yong Liu Qi Yu Jiang-Feng Du; Project supported by the National Natural Science Foundation of China(Grant No.61376078).; A novel p-GaN gate GaN high-electron-mobility transistor(HEMT)with an AlGaN buffer layer and hybrid dielectric zone(H-HEMT)is proposed.The hybrid dielectric zone is located in the buffer and composed of horizontal arr...; 关键词：GaN HEMT breakdown voltage high-permittivity dielectric low-permittivity dielectric

A 9% efficiency of flexible Mo-foil-based Cu2ZnSn(S,Se)4 solar cells by improving CdS buffer layer and heterojunction interface被引量：2: 《Chinese Physics B》2020年第12期573-582,共10页Quan-Zhen Sun Hong-Jie Jia Shu-Ying Cheng Hui Deng Qiong Yan Bi-Wen Duan Cai-Xia Zhang Qiao Zheng Zhi-Yuan Yang Yan-Hong Luo Qing-Bo Men Shu-Juan Huang; Project supported by the National Natural Science Foundation of China(Grant Nos.62074037,61574038,51961165108,and 51972332);the Natural Science Foundation of Fujian Province,China(Grant No.2017J01503);the Education and Scientific Research Project of Fujian Province,China(Grant No.JAT190010);the Open Project Program of the State Key Laboratory of Photocatalysis on Energy and Environment,China(Grant No.SKLPEE-202011);Fuzhou University,China。; Flexible Cu2ZnSn(S,Se)4(CZTSSe)solar cells show great potential applications due to low-cost,nontoxicity,and stability.The device performances under an especial open circuit voltage(VOC)are limited by the defect recom...; 关键词：flexible solar cells CdS deposition heterojunction interface defect passivation

Influence of Zr(50)Cu(50) thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films: 《Chinese Physics B》2020年第3期361-368,共8页Bao-Qing Zhang Gao-Peng Liu Hai-Tao Zong Li-Ge Fu Zhi-Fei Wei Xiao-Wei Yang Guo-Hua Cao; Project supported by the National Natural Science Foundation of China(Grant No.51571085);the Key Science and Technology Program of Henan Province,China(Grant No.19212210210);the Foundation of Henan Educational Committee,China(Grant No.13B430019);the Henan Postdoctoral Science Foundation,China。; Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature o...; 关键词：aluminum-doped ZnO(AZO) Zr(50)Cu(50) thin film METALLIC glass optoelectrical properties morphology

Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes被引量：1: 《Chinese Physics B》2020年第1期417-423,共7页Qian Chen Songhe Yang Lei Dong Siyuan Cai Jiaju Xu Zongxiang Xu; Project supported by the Shenzhen Personal Maker Project,China(Grant No.GRCK2017082316173208);the Shenzhen Overseas High-level Talents Innovation Plan of Technical Innovation,China(Grant No.KQJSCX20180323140712012);the Special Funds for the Development of Strategic Emerging Industries in Shenzhen,China(Grant No.JCJY20170818154457845); Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The ...; 关键词：organic light-emitting diode anode buffer layer metal phthalocyanine solution process

Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate: 《Chinese Physics B》2019年第11期364-369,共6页Jing Zhang Hong-Liang Lv Hai-Qiao Ni Shi-Zheng Yang Xiao-Ran Cui Zhi-Chuan Niu Yi-Men Zhang Yu-Ming Zhang; Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301);the National Defense Innovation Program,China(Grant No.48xx4);the National Key Technologies Research and Development Program,China(Grant No.2018YFA0306101);the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032);the National Natural Science Foundation of China(Grant No.61505196); The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax...; 关键词：Si STICKING COEFFICIENTS growth temperature GaAsxSb1-x METAMORPHIC buffer

Research on SEE mitigation techniques using back junction and p^+ buffer layer in domestic non-DTI SiGe HBTs by TCAD被引量：1: 《Chinese Physics B》2019年第6期465-471,共7页Jia-Nan Wei Chao-Hui He Pei Li Yong-Hong Li; Project supported by the National Natural Science Foundation of China(Grant Nos.11775167,11575138,and 11835006); In this paper we investigate two techniques for single event effect(SEE) mitigation by using back junction and p^+buffer layer in non-deep trench isolation(DTI) domestic silicon–germanium heterojunction bipolar trans...; 关键词：silicon–germanium HBT single event effect mitigation technique TCAD simulation

Epitaxial fabrication of two-dimensional TiTe_2 monolayer onAu(111) substrate with Te as buffer layer: 《Chinese Physics B》2019年第5期16-19,共4页Zhipeng Song Bao Lei Yun Cao Jing Qi Hao Peng Qin Wang Li Huang Hongliang Lu Xiao Lin Ye-Liang Wang Shixuan Du Hong-Jun Gao; Project supported by the National Key Research&Development Program of China(Grant Nos.2016YFA0202300 and 2018YFA0305800);the National Natural Science Foundation of China(Grant Nos.61504149,61725107,51572290,and 61622116);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000);the University of Chinese Academy of Sciences;the CAS Key Laboratory of Vacuum Physics; Two-dimensional(2 D) materials provide a platform to exploit the novel physical properties of functional nanodevices.Here, we report on the formation of a new 2 D layered material, a well-ordered monolayer TiTe_2, on ...; 关键词：TiTe2 EPITAXIAL FABRICATION SUPERLATTICE scanning tunneling microscopy (STM) LOW-ENERGY electron diffraction (LEED)

Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure: 《Chinese Physics B》2018年第10期584-589,共6页Zhi-Qi Kou Yu Tang Li-Ping Yang Fei-Yu Yang Wen-Jun Guo; A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color st...; 关键词：organic light emitting diodes multiple dopants layer buffer layer color stability

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In2S3 heterostructure and its solar cell performance被引量：1: 《Chinese Physics B》2017年第4期356-361,共6页俞金玲郑重明董丽美程树英赖云锋郑巧周海芳贾宏杰张红; Project supported by the National Natural Science Foundation of China(Grant Nos.61574038 and 61674038);the Natural Science Foundation of Fujian Province,China(Grant No.2014J05073); The effect of the deposition temperature of the buffer layer In_2S_3 on the band alignment of CZTS/In_2S_3 heterostructures and the solar cell performance have been investigated.The In_2S_3 films are prepared by therm...; 关键词：band offset deposition temperature CZTS/In2S3 heterostructure solar cell

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