financially supported by the National Natural Science Foundation of China(No.51102037);the Fundamental Research Funds for the Central Universities from UESTC(Nos.ZYGX2010J030 and ZYGX2011J023)。
Porous SiO_(2)film has been widely studied due to its extensive applications in many fields.This paper presents a newly produced porous SiO_(2)film made by traditional sol-gel method.Bare Si and Si with SiO_(2)buffer ...
financially supported by the National Natural Science Foundation of China (No.51171002);Beijing Municipal Natural Science Foundations (Nos.2132011 and KZ201310005003);the Project of Construction of Innovative Teams and Teacher Career Development for Universities and Colleges under Beijing Municipality (No.IDHT20130510);China Postdoctoral Science Foundation funded project (No.2014M560030);Beijing Postdoctoral Research Foundation (No.2014ZZ-38)。
The cube texture evolution of Ni-5 at%W alloy deformed up to a very high strain was thoroughly investigated by X-ray diffraction(XRD) and electron back-scattered diffraction(EBSD) during the process of deformation,rec...
financially supported by the National Natural Science Foundation of China(Nos.51871137,51971122 and 11804210);the National Key R&D Program of China(No.2017YFB0405703);the 1331 Engineering of Shanxi Province;the Key Research and Development Projects of Linfen City(No.2027);the Applied Basic Research Project of Shanxi Province(No.20210302124103)。
Germanium monoselenide(GeSe)has attracted significant attention recently for its excellent optoelectronic properties,nontoxicity,and high stability.However,the current best-performance GeSe solar cells usually take to...
This project was financially supported by the Natural Science Foundation of Hebei Province, China (No.F2005000073).
Hydrogen is a ubiquitous element in semiconductor processing and particularly in amorphous and microcrystalline silicon where it plays a crucial role in the growth processes as well as in the material properties. Beca...
Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) perform...
icrostructures of two Yba_2Cu_3O_(7-y) (YBCO) film deposited on metal substrate (HastelloyC) with yttriastabilized zirconia (YSZ) buffer layer were studied comparatively. Relation of microstructure with deposition con...
Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that t...
The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-os...
Excellcnt epitaxial, highly coriented YBa_2Cua_3O_7 thin films were deposited successfully by dc sputteringon (1120) sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO_2(YSZ), which was grownby ...