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CONTROLLED: 作品数：892被引量：2057H指数：17; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：彭熙伟王向周王渝降亚楠冯东溥更多>>; 相关机构：中国农业大学中国科学院北京理工大学中国科学技术大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金国家高技术研究发展计划更多>>

Second generation fully differential current conveyor based analog circuits被引量：1: 《Journal of Semiconductors》2019年第4期23-28,共6页A.Tonk N.Afzal; UGC for providing valuable support in form of the NET-JRF grant; In this paper, we present a new voltage-mode biquad filter that uses a six-terminal CMOS fully differential current conveyor(FDCCII). The FDCCII with only 23 transistors in its structure and operating at ± 1.5 V, is ...; 关键词：CURRENT conveyors fully DIFFERENTIAL digitally CONTROLLED INTEGRATOR DIFFERENTIATOR

A high linearity X-band SOI CMOS digitally-controlled phase shifter被引量：1: 《Journal of Semiconductors》2015年第6期115-122,共8页陈亮陈新宇张有涛李智群杨磊; This paper proposed an X-band 6-bit passive phase shifter （PS） designed in 0.18 μm silicon-on-insulator （SOI） CMOS technology, which solves the key problem of high integration degree, low power, and a small size ...; 关键词：digitally-controlled phase shifter CMOS technology T/R module

VCCS controlled LDO with small on-chip capacitor: 《Journal of Semiconductors》2014年第11期161-167,共7页李秋丽钱耀吕旦竹洪志良; supported by State Key Laboratory of ASIC and Systems of Fudan University and NSF(No.61076027); A stable LDO using VCCS （voltage control current source） is presented. The LDO is designed and implemented on GF 2P4M 0.35μm CMOS technology. Compared with a previous compensation scheme, VCCS can implement a real ...; 关键词：LDO VCCS small on-chip capacitor frequency compensation LDO stability

A digitally controlled power amplifier with neutralization capacitors for Zigbee^(TM) applications: 《Journal of Semiconductors》2012年第12期56-61,共6页贾非刁盛锡章雪娟傅忠谦林福江; This paper presents a single chip CMOS power amplifier with neutralization capacitors for ZigbeeTM system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power ...; 关键词：power amplifier ZigbeeTM CMOS digital control NEUTRALIZATION

A novel lateral IGBT with a controlled anode for on-off-state loss trade-off improvement: 《Journal of Semiconductors》2011年第7期38-41,共4页陈文锁张波方健李肇基; Project supported by the National Natural Science Foundation of China(Nos.61076082,60876053); A new lateral insulated-gate bipolar transistor with a controlled anode（CA-LIGBT） on silicon-on-insulator （SOI） substrate is reported.Benefiting from both the enhanced conductivity modulation effect and the high r...; 关键词：controlled anode turn-off time forward drop power IC

Surface-type humidity sensor based on cellulose-PEPC for telemetry systems: 《Journal of Semiconductors》2011年第1期103-107,共5页Kh.S.Karimov M.Saleem T.A.Qasuria M.Farooq; GIK Institute of Engineering Sciences and Technology for the support extended to this work; Au/cellulose-PEPC/Au surface-type humidity sensors were fabricated by drop-casting cellulose and poly-N-epoxypropylcarbazole （PEPC） blend thin films. A blend of 2wt% of each cellulose and PEPC in benzol was used for...; 关键词：surface-type sensor： cellulose poly-N-epoxvoropylcarbazole humidity sensor controlled oscillator

A low-phase-noise digitally controlled crystal oscillator for DVB TV tuners被引量：1: 《Journal of Semiconductors》2010年第7期85-90,共6页赵薇卢磊唐长文; Project supported by the National Natural Science Foundation of China(No.60876019);the National S&T Major Project of China(No. 2009ZX0131-002-003-02);the Shanghai Rising-Star Program,China(No.09QA1400300);the National Scientists and Engineers Service for Enterprise Program,China(No.2009GJC00046).; This paper presents a 25-MHz fully-integrated digitally controlled crystal oscillator（DCXO） with automatic amplitude control（AAC）.The DCXO is based on Colpitts topology for one-pin solution.The AAC circuit is intr...; 关键词：crystal oscillator DCXO phase noise supply pushing VCTCXO VCXO

An optically controlled SiC lateral power transistor based on SiC/SiCGe superjunction structure被引量：1: 《Journal of Semiconductors》2010年第4期17-19,共3页蒲红斌曹琳任杰陈治明南雅公; supported by the National Natural Science Foundation of China(No.60876050);the Special Scientific Research Project of Shaan Xi Provincial Department of Education,China(No.08JK367).; An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance ...; 关键词：SiC/SiCGe SUPERJUNCTION optically controlled transistor

Novel lateral IGBT with n-region controlled anode on SOI substrate被引量：1: 《Journal of Semiconductors》2009年第11期47-50,共4页陈文锁谢刚张波李泽宏李肇基; A new lateral insulated-gate bipolar transistor （LIGBT） structure on SOI substrate, called an n-region controlled anode LIGBT （NCA-LIGBT）, is proposed and discussed. The n-region controlled anode concept results i...; 关键词：turn-off time on-state voltage drop NDR power ICs

Photo-Controlled MOBILE's: 《Journal of Semiconductors》2004年第2期143-147,共5页梁惠来郭维廉张世林牛萍娟钟鸣齐海涛; 国家自然科学基金资助项目 (批准号 :60 1770 10)~~; A novel optoelectronic functional circuit with heterojunction phototransistors (HPTs) and resonant tunneling diodes (RTDs) is described,which presents the function of both photocurrent switching and photo-current latc...; 关键词：monostable-bistable transition logic elements photo-controlled simulation

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