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DETECTOR: 作品数：783被引量：1146H指数：12; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：姚佳丽彭博丁艳秋阮向东姜山更多>>; 相关机构：湘潭大学清华大学东南大学中国科学院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划国家教育部博士点基金更多>>

High-performance GaSb planar PN junction detector: 《Journal of Semiconductors》2024年第9期48-52,共5页Yuanzhi Cui Hongyue Hao Shihao Zhang Shuo Wang Jing Zhang Yifan Shan Ruoyu Xie Xiaoyu Wang Chuang Wang Mengchen Liu Dongwei Jiang Yingqiang Xu Guowei Wang Donghai Wu Zhichuan Niu Derang Cao; This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed ...; 关键词：ANTIMONIDE short-wave infrared planar junction zinc diffusion

Organic bulk heterojunction enabled with nanocapsules of hydrate vanadium pentaoxide layer for high responsivity self-powered photodetector: 《Journal of Semiconductors》2022年第9期39-45,共7页Hemraj Dahiya Anupam Agrawal Ganesh D.Sharma Abhishek Kumar Singh; DST,New Delhi for INSPIRE Fellowship(IF190560).; This article demonstrates the fabrication of organic-based devices using a low-cost solution-processable technique.A blended heterojunction of chlorine substituted 2D-conjugated polymer PBDB-T-2Cl,and PC71BM supported...; 关键词：self-powered detector green light sensor HVO PBDB-T-2Cl detector processable solution sensor

Strain-induced the dark current characteristics in InAs/GaSb type-Ⅱ superlattice for mid-wave detector被引量：2: 《Journal of Semiconductors》2020年第6期35-38,共4页H.J.Lee S.Y.Ko Y.H.Kim J.Nah; supported by the research fund of Chungnam National University; Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed duri...; 关键词：mid-wave detector InAs/GaSb typeⅡsuper lattice dark current

Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system被引量：1: 《Journal of Semiconductors》2015年第5期61-65,共5页Hamed Ghodsi Hassan Kaatuzian; In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiG...; 关键词：TERAHERTZ SIGE HBT physical structure direct conversion detector

Room temperature quantum cascade detector operating at 4.3 μm被引量：1: 《Journal of Semiconductors》2014年第10期66-69,共4页王雪娇刘俊岐翟慎强刘峰奇王占国; Project supported by the National Basic Research Program of China(No.2013CB632802/04);the National Natural Science Foundation of China(Nos.61376051,10990103); A strain-compensated InP-based InGaAs/lnAlAs quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 μm up to room temperature （300 K） with a responsivity o...; 关键词：infrared detector quantum cascade molecular beam epitaxy

Design of improved CMOS phase-frequency detector and charge-pump for phase-locked loop被引量：1: 《Journal of Semiconductors》2014年第10期119-125,共7页刘法恩王志功李智群李芹陈胜; Project supported by the National Basic Research Program of China(No.2010CB327404);the National High Technology Research and Development Program(No.2011AA10305);the National Natural Science Foundation of China(No.60901012); Two essential blocks for the PLLs based on CP, a phase-frequency detector （PFD） and an improved current steering charge-pump （CP）, are developed. The mechanisms for widening the phase error detection range and eli...; 关键词：CMOS phase-frequency detector charge-pump current compensation accelerating acquisition PLL

Characterization of CdMnTe radiation detectors using current and charge transients: 《Journal of Semiconductors》2013年第7期19-25,共7页R.Rafiei M.I.Reinhard A.Sarbutt S.Uxa D.Boardman G.C.Watt E.Belas K.Kim A.E.Bolotnikov R.B.James; supported in part by the Cooperative Research Centre for Biomedical Imaging Development; Charge transport characteristics of Cd_（0.95）Mn_（0.05）Te：In radiation detectors have been evaluated by combining time resolved current transient measurements with time of flight charge transient measurements.The ...; 关键词：radiation detector CDMNTE CMT detector fabrication transient current technique time of flighttechnique

A different approach for determining the responsivity of n^+p detectors using scanning electron microscopy: 《Journal of Semiconductors》2012年第7期29-33,共5页Omeime Xerviar Esebamen Gran Thungstrm Hans-Erik Nilsson; This paper explores an alternative to the standard method of studying the responsivities （the input-output gain） and other behaviours of detectors at low electron energy. The research does not aim to compare the res...; 关键词：scanning electron microscopy RESPONSIVITY n＋p detector

A high dynamic range linear RF power detector with a preceding LNA被引量：1: 《Journal of Semiconductors》2012年第1期107-113,共7页Dai Yingbo Han Kefeng Yan Na Tan Xi; Project supported by the Important National Science & Technology Specific Projects,China(No.2010ZX03001-004);the National High Technology Research and Development Program of China(No.2009AA011605); A design of high dynamic range linear radio frequency power detector （PD）, aimed for transmitter carrier leakage suppression is presented in this paper. Based on the logarithmic amplifier principle, this detector ut...; 关键词：logarithmic amplifier successive detection low noise amplifier （LNA） DC offset cancelling （DCOC） power detector （PD）

Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates被引量：4: 《Journal of Semiconductors》2011年第7期49-51,共3页宿世臣杨孝东胡灿栋; Project supported by the Grow Seedlings Project of Guangdong Province,China(No.LYM 10063); ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si（111） substrates.The nanostructures have preferred orientation along the c axis.The nanostructures are about 10 t...; 关键词：ZNO DETECTOR MBE

DETECTOR