云南高校图书馆联盟文献共享服务平台- DEVICES

DEVICES: 作品数：1024被引量：1159H指数：13; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：徐志汉张英男梁仁荣周卫李贻昆更多>>; 相关机构：美国ADI集团公司中国汽车技术研究中心清华大学国家电网公司更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices: 《Chinese Physics B》2024年第3期602-608,共7页何雄杨凡黎牛浩峪王立峰易立志许云丽刘敏潘礼庆夏正才; Project supported by the Special Funding for Talents of Three Gorges University(Grant No.8230202);the National Natural Science Foundation of China(Grant No.12274258);National Key R&D Program of China(Grant No.2016YFA0401003).; Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at roo...; 关键词：MAGNETORESISTANCE germanium-based devices pulsed high magnetic fields

Applications and potentials of machine learning in optoelectronic materials research:An overview and perspectives: 《Chinese Physics B》2023年第12期108-128,共21页张城洲付小倩; Project supported by the National Natural Science Foundation of China (Grant No.61601198);the University of Jinan PhD Foundation (Grant No.XBS1714)。; Optoelectronic materials are essential for today's scientific and technological development,and machine learning provides new ideas and tools for their research.In this paper,we first summarize the development history...; 关键词：optoelectronic materials DEVICES machine learning prior knowledge

Research on self-supporting T-shaped gate structure of GaN-based HEMT devices: 《Chinese Physics B》2023年第6期551-555,共5页张鹏李苗陈俊文刘加志马晓华; Project supported by the National Natural Science Foundation of China(Grant No.62188102);the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2022JM-316);the Fund from the Ministry of Education of China(Grant No.8091B042112)。; A self-supporting T-shaped gate(SST-gate) GaN device and process method using electron beam lithography are proposed.An AlGaN/GaN high-electron-mobility transistor(HEMT) device with a gate length of 100 nm is fabricat...; 关键词：GAN high-electron-mobility transistor(HEMT) SELF-SUPPORTING T-GATE

Focused-ion-beam assisted technique for achieving high pressure by uniaxial-pressure devices: 《Chinese Physics B》2023年第4期622-626,共5页刘迪王兴玉李泽众马肖燕李世亮; Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1403402,2021YFA1400401, 2020YFA0406003, and 2017YFA0302903);the National Natural Science Foundation of China (Grant Nos. 11961160699 and 11874401);the Chinese Academy of Sciences (Grant Nos. XDB33000000 and GJTD-2020-01)。; Uniaxial pressure or strain can introduce a symmetry-breaking distortion on the lattice and may alter the ground states of a material. Compared to hydrostatic pressure, a unique feature of the uniaxial-pressure measur...; 关键词：uniaxial pressure iron-based superconductors FOCUSED-ION-BEAM

Advances of phononics in 2012-2022: 《Chinese Physics B》2022年第12期383-394,共12页Ya-Fei Ding Gui-Mei Zhu Xiang-Ying Shen Xue Bai Bao-Wen Li; supported by the National Natural Science Foundation of China(Grant No.62004211);Shenzhen Science and Technology Program(Grant No.RCBS20200714114858221); Due to its great potential applications in thermal management,heat control,and quantum information,phononics has gained increasing attentions since the first publication in Rev.Mod.Phys.841045(2012).Many theoretical a...; 关键词：phononics thermal diode thermal transistor thermal control devices

Spin transport in epitaxial Fe3O4/GaAs lateral structured devices: 《Chinese Physics B》2022年第6期736-740,共5页Zhaocong Huang Wenqing Liu Jian Liang Qingjie Guo Ya Zhai Yongbing Xu; supported by the National Key Research and Development Program of China(Grant No.2017YFA0204800);the National Natural Science Foundation of China(Grant Nos.52071079 and 11504047)。; Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor(SFET),which has the potential for combining the data storage and process in a single device.Her...; 关键词：spin field-effect transistor spin injection and detection half metal MAGNETORESISTANCE

Review of resistive switching mechanisms for memristive neuromorphic devices: 《Chinese Physics B》2020年第9期1-14,共14页Rui Yang; Project supported by the National Natural Science Foundation of China(Grant Nos.U1832116 and 51772112);Fundamental Research Funds for the Central Universities,China(Grant No.HUST:2016YXZD058).; Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure,low power consumption,and rich switching dynamics r...; 关键词：memristive devices resistive switching mechanisms neuromorphic computing

Progress on 2D topological insulators and potential applications in electronic devices: 《Chinese Physics B》2020年第9期36-44,共9页Yanhui Hou Teng Zhang Jiatao Sun Liwei Liu Yugui Yao Yeliang Wang; Project supported by the Beijing Natural Science Foundation,China(Grant Nos.Z190006 and 4192054);the National Natural Science Foundation of China(Grant Nos.61971035,61901038,and 61725107);Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB30000000);Beijing Institute of Technology Research Fund Program for Young Scholars(Grant No.3050011181814).; Two-dimensional topological insulators(2DTIs)have attracted increasing attention during the past few years.New 2DTIs with increasing larger spin-orbit coupling(SOC)gaps have been predicted by theoretical calculations ...; 关键词：two-dimensional materials topological insulators quantum spin Hall effect dissipation-less devices nanoelectronics

Memristor-based vector neural network architecture被引量：1: 《Chinese Physics B》2020年第2期463-467,共5页Hai-Jun Liu Chang-Lin Chen Xi Zhu Sheng-Yang Sun Qing-Jiang Li Zhi-Wei Li; Project supported by the National Natural Science Foundation of China(Grant Nos.61471377,61804181,61604177,and 61704191).; Vector neural network(VNN)is one of the most important methods to process interval data.However,the VNN,which contains a great number of multiply-accumulate(MAC)operations,often adopts pure numerical calculation metho...; 关键词：MEMRISTOR memristive DEVICES VECTOR NEURAL NETWORK INTERVAL

Polarized red, green, and blue light emitting diodes fabricated with identical device configuration using rubbed PEDOT:PSS as alignment layer: 《Chinese Physics B》2019年第7期116-121,共6页Haoran Zhang Qi Zhang Qian Zhang Huizhi Sun Gang Hai Jing Tong Haowen Xu Ruidong Xia; Project supported by the National Natural Science Foundation of China(Grant Nos.61874058,51861145301,and 61376023);the National Key Basic Research Program of China(Grant No.2015CB932203);China Postdoctoral Science Foundation(Grant No.2018M642283);the Synergetic Innovation Center for Organic Electronics and Information Displays,China;the Priority Academic Program Development Fund of Jiangsu Higher Education Institutions(PAPD)in China; Polarized red, green, and blue light emitting diodes(LEDs) are successfully fabricated using polyfluorene and its derivatives, namely, poly(9,9-dioctylfluorene)(PFO), poly(9,9-dioctylfluorene-co-benzothiadiazole)(F8BT...; 关键词：organic SEMICONDUCTORS LIGHT-EMITTING DEVICES polymer liquid CRYSTALS display DEVICES

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