云南高校图书馆联盟文献共享服务平台- GAP

GAP: 作品数：2462被引量：4705H指数：24; 导出分析报告; 相关领域：农业科学医药卫生更多>>; 相关作者：罗运军周荣汉赵凤起莫洪昌杨锡震更多>>; 相关机构：北京理工大学西安近代化学研究所北京师范大学厦门大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家科技支撑计划国家教育部博士点基金更多>>

Interface engineering in two-dimensional heterostructures towards novel emitters被引量：1: 《Journal of Semiconductors》2023年第1期17-31,共15页Hua Li Jinyang Ling Jiamin Lin Xin Lu Weigao Xu; supported by the Natural Science Foundation of China(22203042,21873048 and 22173044)。; Two-dimensional(2D) semiconductors have captured broad interest as light emitters, due to their unique excitonic effects. These layer-blocks can be integrated through van der Waals assembly, i.e., fabricating homo-or ...; 关键词：van der Waals assembly interface interaction interlayer gap twist angle intralayer and interlayer excitons moiréexcitons

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy: 《Journal of Semiconductors》2022年第12期32-38,共7页Tieshi Wei Xuefei Li Zhiyun Li Wenxian Yang Yuanyuan Wu Zhiwei Xing Shulong Lu; supported in part by the National Key R&D Program(Grant No.2018YFB2003305);the National Natural Science Foundation of China(Grant Nos.61774165,61704186,and 61827823);the program from SINANO(Y8AAQ11003 and Y4JAQ21005)。; The atomic structure and surface chemistry of GaP/Si(100)heterostructure with different pre-layers grown by molecu-lar beam epitaxy are studied.It is found that GaP epilayer with Ga-riched pre-layers on Si(100)substra...; 关键词：XPS interfacial dynamics GaP/Si(100)heterostructure MBE

Sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) semiconductor thin films: 《Journal of Semiconductors》2022年第6期46-50,共5页Yitian Bao Xiaorui Wang Shijie Xu; This study was financially supported by the National Natural Science Foundation of China(No.12074324);the Shenzhen Municipal Science and Technology Innovation Council(No.JCJY20180508163404043).; In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive index...; 关键词：gallium oxide sub-bandgap refractive index Si doping effective optical bandgap sub-bandgap absorption

Low-bandgap Sn-Pb perovskite solar cells被引量：1: 《Journal of Semiconductors》2021年第6期4-7,共4页Rui He Chuantian Zuo Shengqiang Ren Dewei Zhao Liming Ding; supported by the National Key Research and Development Program of China(2019YFE0120000);the Science and Technology Program of Sichuan Province(2020JDJQ0030);the Fundamental Research Funds for the Central Universities(YJ201955);National Key Research and Development Program of China(2017YFA0206600);the National Natural Science Foundation of China(51773045,21772030,51922032,21961160720)for financial support。; Record power conversion efficiency(PCE)for organic-inorganic halide perovskite solar cells(PSCs)has been rapidly boosted from 3.8%to 25.5%,approaching the Shockley-Queisser(S-Q)limit for single-junction solar cells[1-3].; 关键词：BOOST PEROVSKITE APPROACHING

High temperature magnetic semiconductors: narrow band gaps and two-dimensional systems被引量：2: 《Journal of Semiconductors》2019年第8期36-44,共9页Bo Gu; supported by NSFC (Grant No. Y81Z01A1A9);CAS (Grant No. Y929013EA2);UCAS (Grant No.110200M208);the Strategic Priority Research Program of CAS (Grant No. XDB28000000);the National Key R&D Program of China (Grant No.11834014);Beijing Municipal Science & Technology Commission (Grant No. Z181100004218001); Magnetic semiconductors have been demonstrated to work at low temperatures, but not yet at room temperature for spin electronic applications. In contrast to the p-type diluted magnetic semiconductors, n-type diluted m...; 关键词：magnetic SEMICONDUCTOR NARROW BAND GAP two DIMENSIONAL systems

Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material被引量：7: 《Journal of Semiconductors》2019年第1期17-25,共9页Hang Dong Huiwen Xue Qiming He Yuan Qin Guangzhong Jian Shibing Long Ming Liu; supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166);the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603);the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001);the Beijing Municipal Science and Technology Project(No.Z171100002017011);the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences; As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...; 关键词：gallium oxide(Ga_2O_3) ultra-wide bandgap semiconductor power device field effect transistor(FET)

Kirk effect and suppression for 20 V planar active-gap LDMOS被引量：1: 《Journal of Semiconductors》2013年第5期59-63,共5页聂卫东易法友于宗光; For 20 V planar active-gap lateral double-diffused MOSFET （LDMOS）, the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the ...; 关键词：planar active-gap LDMOS sectional channel n-drift length L-drift n-drift concentration Kirk effect electrical safe operating area

A 150-nA 13.4-ppm/℃switched-capacitor CMOS sub-bandgap voltage reference被引量：5: 《Journal of Semiconductors》2011年第4期155-160,共6页严伟李文宏刘冉; Project supported by the National High Technology Research and Development Program of China(No2009AA011607); A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 035-μm 3.3-V/5-V dual gate mixed-signal CMOS process.The proposed circuit generates a precise sub-bandgap volta...; 关键词：nanopower sub-bandgap SWITCHED-CAPACITOR voltage reference

Properties of the ITO layer in a novel red light-emitting diode被引量：1: 《Journal of Semiconductors》2010年第4期9-13,共5页张勇辉郭伟玲高伟李春伟丁天平; supported by the National High Technology Research and Development Program of China(Nos.2008AA03Z402, SQ200703Z431230);the Beijing National Science Foundation of China(No.4092007);the Talent Promoting Education of Beijing, China(No.05002015200504).; An optically transparent electrode, indium tin oxide （ITO） film is fabricated by vacuum E-beam evaporation. The thermal annealing effects on the ITO/GaP contact have been investigated by means of the transmission li...; 关键词：indium tin oxide GAP contact resistance RELIABILITY

A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances: 《Journal of Semiconductors》2009年第3期72-77,共6页董林玺陈金丹颜海霞霍卫红李永杰孙玲玲; supported by the National Natural Science Foundation of China (No. 60506015);the Zhejiang Provincial Natural ScienceFoundation of China (No.Y107105).; The comb capacitances fabricated by deep reactive ion etching （RIE） process have high aspect ratio which is usually smaller than 30 ： 1 for the complicated process factors, and the combs are usually not parallel du...; 关键词：capacitive accelerometer inertial sensor high precision deep RIE

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