云南高校图书馆联盟文献共享服务平台- LATCH-UP

LATCH-UP: 作品数：16被引量：30H指数：4; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：唐晨孙伟锋陆生礼王惠萍赵力更多>>; 相关机构：东南大学电子科技大学中国电子科技集团第五十八研究所戴泺格集成电路(天津)有限公司更多>>; 相关期刊：《固体电子学研究与进展》《Journal of Semiconductors》《Science China(Information Sciences)》《电子与封装》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划广东省自然科学基金更多>>

IC版图闩锁预防: 《数字技术与应用》2019年第3期109-109,111,共2页贺雪群; 在版图设计当中,latch-up闩锁是比较常见的现象。电路设计上有可能自然形成,但版图设计中更容易形成这种结构。除了普通情况下形成的latch-up结构,我们还有可能碰到比较特殊的情况,比如管子的SUB为衬切的情况,这种情况下稍有不慎就会形...; 关键词：衬切 LATCH-UP 衬切管

Latch-up测试中负电流的影响和防护: 《电子技术应用》2018年第5期36-38,共3页孙俊岳; 阐述了在Latch-up测试中负电流的产生机理,以及芯片内部寄生双极晶体管对负电流的连锁反应机理,并以模拟电压缓冲器和线性稳压器为例分析了负电流对芯片可能造成的影响,最后提出了一系列在芯片内部可以采取的防护措施。; 关键词：LATCH-UP 负电流模拟电压缓冲器线性稳压器

High holding voltage SCR for robust electrostatic discharge protection: 《Chinese Physics B》2017年第7期346-351,共6页齐钊乔明何逸涛张波; Project supported by the National Natural Science Foundation of China(Grant Nos.61376080 and 61674027);the Natural Science Foundation of Guangdong Province,China(Grant Nos.2014A030313736 and 2016A030311022); A novel silicon controlled rectifier（SCR） with high holding voltage（Vh） for electrostatic discharge（ESD） protection is proposed and investigated in this paper. The proposed SCR obtains high Vhby adding a long N...; 关键词：electrostatic discharge holding voltage latch-up-free failure current

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter被引量：4: 《Chinese Physics B》2017年第2期492-498,共7页Yu-Hang Zhang Chang-Chun Chai Xin-Hai Yu Yin-Tang Yang Yang Liu Qing-Yang Fan Chun-Lei Shi; Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(Grant No.2015-0214.XY.K); The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrie...; 关键词：high-power microwave latch-up repetitive pulse frequency supply voltage dependence

Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application被引量：1: 《Chinese Physics B》2015年第4期394-398,共5页马金荣乔明张波; A novel substrate trigger semiconductor control rectifier-laterally diffused metal-oxide semiconductor （STSCR- LDMOS） stacked structure is proposed and simulated using the transimission line pulser （TLP） multiple-...; 关键词：electrostatic discharge high holding voltage LATCH-UP STSCR-LDMOS

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up被引量：2: 《Chinese Physics B》2015年第4期300-305,共6页陈睿韩建伟郑汉生余永涛上官士鹏封国强马英起; Project supported by the National Natural Science Foundation of China(Grant No.41304148); By using the pulsed laser single event effect facility and electro-static discharge （ESD） test system, the characteristics of the ＂high current＂, relation with external stimulus and relevance to impacted modes of ...; 关键词：single event latch-up transient-induced latch-up electro-static discharge pulsed laser

An improved trench gate super-junction IGBT with double emitter: 《Journal of Semiconductors》2015年第1期95-100,共6页戴伟楠祝靖孙伟锋杜益成黄克琴; Project supported by the National Natural Science Foundation of China(No.61204083);the Natural Science Foundation of the Jiangsu Province of China(Nos.BK2012204,BY2011146);the Scientific Research Guidance Foundation of Southeast University Wuxi Branch Campus; An improved trench gate super-junction insulated-gate bipolar transistor is presented. The improved structure contains two emitter regions. The first emitter region of the device works as the conventional structure,wh...; 关键词：trench gate super-junction（SJ） insulated-gate bipolar transistor（IGBT） latch-up

Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave被引量：3: 《Journal of Semiconductors》2014年第8期115-120,共6页于新海柴常春任兴荣杨银堂席晓文刘阳; Project supported by the National Natural Science Foundation of China(No.60776034);the State Key Development Program for Basic Research of China(No.2014CC339900); The temperature dependence of the latch-up effects in a CMOS inverter based on 0.5 μm technology caused by high power microwave （HPM） is studied. The malfunction and power supply current characteristics are reveale...; 关键词：complementary metal oxide semiconductor high power microwave LATCH-UP thermal effect temper-ature dependence

Novel silicon-controlled rectifier(SCR) for digital and high-voltage ESD power supply clamp被引量：6: 《Science China(Information Sciences)》2014年第2期285-290,共6页ZHANG Peng WANG Yuan ZHANG Xing MA XiaoHua HAO Yue; supported by National Basic Research Program of China(Grant No.2011CBA00606);Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61106101); Due to latch-up issue, the main problem of silicon-controlled rectifier （SCR） tor power supply clamps in on-chip ESD protection is its inherent low holding voltage, especially in high-voltage applications. In this p...; 关键词：electrostatic discharge （ESD） SCR latch-up immunity holding voltage power supply clamp high voltage

A novel latch-up free SCR-LDMOS with high holding voltage for a power-rail ESD clamp被引量：2: 《Journal of Semiconductors》2013年第1期53-57,共5页潘红伟刘斯扬孙伟锋; Project supported by the Natural Science Foundation of Jiangsu Province (No.BK2011059);the Program for New Century Excellent Talent in University (No.NCET-10-0331); The low snapback holding voltage of the SCR-LDMOS device makes it susceptible to latch-up failure,when used in power-rail ESD（electro-static discharge） clamp circuits.In order to eliminate latch-up risk,this work pr...; 关键词：ESD protection ESD robustness SCR-LDMOS LATCH-UP holding voltage

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